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FDMS86568_F085 PDF даташит

Спецификация FDMS86568_F085 изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «MOSFET ( Transistor )».

Детали детали

Номер произв FDMS86568_F085
Описание MOSFET ( Transistor )
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FDMS86568_F085 Даташит, Описание, Даташиты
FDMS86568_F085
N-Channel PowerTrench® MOSFET
60 V, 80 A, 3.5 mΩ
December
2014
Features
„ Typical RDS(on) = 2.6 mΩ at VGS = 10V, ID = 80 A
„ Typical Qg(tot) = 55 nC at VGS = 10V, ID = 80 A
„ UIS Capability
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Automotive Engine Control
„ PowerTrain Management
„ Solenoid and Motor Drivers
„ Integrated Starter/Alternator
„ Primary Switch for 12V Systems
For current package drawing, please refer to the Fairchild web
site  at  https://www.fairchildsemi.com/packagedrawings/PQ/
PQFN08M.pdf
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
VGS
ID
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate Above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
60
±20
80
See Figure 4
102
214
1.43
-55 to + 175
0.7
50
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 50uH, IAS = 64A, VDD = 60V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface
presented here is
of the
based
drain pins. RθJC is
on mounting on a 1
guaranteed by design,
in2 pad of 2oz copper.
while
RθJAis
determined
by
the
board
design.
The maximum rating
Package Marking and Ordering Information
Device Marking
FDMS86568
Device
FDMS86568_F085
Package
Power56
Reel Size
13”
Tape Width
12mm
Quantity
3000units
©2014 Fairchild Semiconductor Corporation
FDMS86568_F085 Rev. C1
1
www.fairchildsemi.com









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FDMS86568_F085 Даташит, Описание, Даташиты
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Off Characteristics
Test Conditions
Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS = 60V TJ = 25oC
VGS = 0V TJ = 175oC (Note 4)
VGS = ±20V
60
-
-
-
- -V
- 1 μA
- 1 mA
- ±100 nA
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
2.0 3.0 4.0
V
ID = 80A, TJ = 25oC
- 2.6 3.5 mΩ
VGS= 10V TJ = 175oC (Note 4)
-
4.9 6.6 mΩ
Ciss
Coss
Crss
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
Switching Characteristics
VDS = 30V, VGS = 0V,
f = 1MHz
f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 48V
ID = 80A
- 4335
-
- 1065
-
- 36
-
- 2.5
-
- 55 71
-8-
- 23 -
-9 -
pF
pF
pF
Ω
nC
nC
nC
nC
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay
Rise Time
Turn-Off Delay
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VDD = 30V, ID = 80A,
VGS = 10V, RGEN = 6Ω
- - 64 ns
- 21 - ns
- 20 - ns
- 33 - ns
- 13 - ns
- - 64 ns
VSD Source-to-Drain Diode Voltage
trr Reverse-Recovery Time
Qrr Reverse-Recovery Charge
ISD =80A, VGS = 0V
ISD = 40A, VGS = 0V
IF = 80A, dISD/dt = 100A/ms
VDD = 48V
--
--
- 67
- 70
Note:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
1.25
1.2
87
99
V
V
ns
nC
FDMS86568_F085 Rev. C1
2
www.fairchildsemi.com









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FDMS86568_F085 Даташит, Описание, Даташиты
Typical Characteristics
1.2 200
CURRENT LIMITED
VGS = 10V
1.0 BY PACKAGE
150 CURRENT LIMITED
0.8 BY SILICON
0.6 100
0.4
50
0.2
0.0
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs. Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.1 0.01
SINGLE PULSE
0
25
50 75 100 125 150 175 200
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
0.01
10-5
10-4 10-3 10-2 10-1 100
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
101
1000
VGS = 10V
100
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I2
175 - TC
150
SINGLE PULSE
10
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
FDMS86568_F085 Rev. C1
3
100 101
www.fairchildsemi.com










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FDMS86568_F085MOSFET ( Transistor )Fairchild Semiconductor
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