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PDF FDD86326 Data sheet ( Hoja de datos )
| Número de pieza | FDD86326 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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May 2013
FDD86326
N-Channel Shielded Gate PowerTrench® MOSFET
80 V, 37 A, 23 m:
Features
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 23 m: at VGS = 10 V, ID = 8 A
Max rDS(on) = 37 m: at VGS = 6 V, ID = 4.6 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
Very low Qg and Qgd compared to competing trench
technologies
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for rDS(on), switching performance and ruggedness.
Application
DC - DC Conversion
Fast switching speed
100% UIL tested
RoHS Compliant
D
D
G
S
DT O-P-2A5K2
(T O -25 2)
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
80
±20
37
8
40
121
62
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDD86326
Device
FDD86326
Package
D-PAK(TO-252)
(Note 1a)
2.0
40
°C/W
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
FDD86326 Rev.C2
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
10-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RTJC = 2 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJC x RTJC + TC
10-4
10-3
10-2
10-1
Figure 13. Junction-to-CCaseGTransienSt ThermOal(Re)sponse Curve
1
©2010 Fairchild Semiconductor Corporation
FDD86326 Rev.C2
5
www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet FDD86326.PDF ] | |
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