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FDBL86363_F085 PDF даташит

Спецификация FDBL86363_F085 изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «MOSFET ( Transistor )».

Детали детали

Номер произв FDBL86363_F085
Описание MOSFET ( Transistor )
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FDBL86363_F085 Даташит, Описание, Даташиты
FDBL86363_F085
N-Channel PowerTrench® MOSFET
80 V, 240 A, 2.0 mΩ
April 2015
Features
„ Typical RDS(on) = 1.5 mΩ at VGS = 10V, ID = 80 A
„ Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 A
„ UIS Capability
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Automotive Engine Control
„ PowerTrain Management
„ Solenoid and Motor Drivers
„ Integrated Starter/Alternator
„ Primary Switch for 12V Systems
D
G
S
For current package drawing, please refer to the Fairchild web
site at http://www.fairchildsemi.com/dwg/PS/PSOF08A.pdf.
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
VGS
ID
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate Above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
80
±20
240
See Figure 4
512
357
2.38
-55 to + 175
0.42
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Notes:
1: Current is limited by silicon.
2: Starting TJ = 25°C, L = 0.25mH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface
presented here is
of the
based
drain pins. RθJC is
on mounting on a 1
guaranteed by design,
in2 pad of 2oz copper.
while
RθJAis
determined
by
the
board
design.
The maximum rating
Package Marking and Ordering Information
Device Marking
FDBL86363
Device
FDBL86363_F085
Package
MO-299A
Reel Size
-
Tape Width
-
Quantity
-
©2015 Fairchild Semiconductor Corporation
FDBL86363_F085 Rev. C1
1
www.fairchildsemi.com









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FDBL86363_F085 Даташит, Описание, Даташиты
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Off Characteristics
Test Conditions
Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS=80V, TJ = 25oC
VGS = 0V TJ = 175oC (Note 4)
VGS = ±20V
80
-
-
-
- -V
- 1 μA
- 1 mA
- ±100 nA
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
2.0 3.0 4.0
V
ID = 80A, TJ = 25oC
- 1.5 2.0 mΩ
VGS= 10V TJ = 175oC (Note 4)
-
3.1 4.1 mΩ
Ciss
Coss
Crss
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
Switching Characteristics
VDS = 40V, VGS = 0V,
f = 1MHz
f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 64V
ID = 80A
- 10000
-
- 1540
-
- 70
-
- 2.8
-
- 130 169
- 18 27
- 47 -
- 24 -
pF
pF
pF
Ω
nC
nC
nC
nC
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay
Rise Time
Turn-Off Delay
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VDD = 40V, ID = 80A,
VGS = 10V, RGEN = 6Ω
- - 133 ns
- 39 - ns
- 63 - ns
- 61 - ns
- 33 - ns
- - 140 ns
VSD Source-to-Drain Diode Voltage
trr Reverse-Recovery Time
Qrr Reverse-Recovery Charge
ISD =80A, VGS = 0V
ISD = 40A, VGS = 0V
IF = 80A, dISD/dt = 100A/μs,
VDD=64V
--
--
- 83
- 118
Note:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
1.25
1.2
108
153
V
V
ns
nC
©2015 Fairchild Semiconductor Corporation
FDBL86363_F085 Rev. C1
2
www.fairchildsemi.com









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FDBL86363_F085 Даташит, Описание, Даташиты
Typical Characteristics
1.2 350
1.0
CURRENT LIMITED
BY SILICON
VGS = 10V
280
0.8
210
0.6
140
0.4
0.2 70
0.0
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs. Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.1 0.01
SINGLE PULSE
0
25
50 75 100 125 150 175 200
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TC
0.01
10-5
10-4 10-3 10-2 10-1 100
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
101
10000
VGS = 10V
1000
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I2
175 - TC
150
100
SINGLE PULSE
10
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
©2015 Fairchild Semiconductor Corporation
FDBL86363_F085 Rev. C1
3
www.fairchildsemi.com










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Номер в каталогеОписаниеПроизводители
FDBL86363_F085MOSFET ( Transistor )Fairchild Semiconductor
Fairchild Semiconductor

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