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PDF FDB86135 Data sheet ( Hoja de datos )
| Número de pieza | FDB86135 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDB86135
N-Channel Shielded Gate PowerTrench® MOSFET
100V, 176A, 3.5mΩ
May 2013
Features
• Shielded Gate MOSFET Technology
• Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Applications
• DC-DC primary bridge
• DC-DC Synchronous rectification
• Hot swap
D
D
GS
D2-PAK
FDB Series
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Curren
- Continuous (Silicon Limited)
- Continuous( Package Limited)
- Continuous
- Pulsed
Single Pulsed Avalanche Energy
Power Dissipation
- TC = 25oC
- TA = 25oC
Operating and Storage Temperature Range
TC = 25oC
TC = 25oC
TC = 25oC(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
S
Ratings
100
±20
176
120
75
704
658
227
2.4
-55 to +175
Units
V
V
A
A
mJ
W
W/oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDB86135
Device
FDB86135
Package
D2-PAK
(Note 1)
(Note 1a)
Ratings
0.66
62.5
Reel Size
330mm
Tape Width
24mm
Units
oC/W
Quantity
800
©2011 Fairchild Semiconductor Corporation
FDB86135 Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 12. Transient Thermal Response Curve
3
1
0 .5
0 .1 0.2
0 .1
0 .0 5
0 .0 2
0 .0 1 0.01
Single pulse
0 .0 0 1
1 0 -5
1 0 -4
PDM
t1
t2
*N otes:
1. ZθJC(t) = 0.66oC /W M ax.
2. D uty Factor, D = t1/t2
3. T JM - T C = P DM * ZθJC(t)
1 0 -3
1 0 -2
1 0 -1
R ectangular P ulse D uration [sec]
1
10
FDB86135 Rev. C1
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDB86135.PDF ] | |
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