DataSheet26.com

FCP190N60 PDF даташит

Спецификация FCP190N60 изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «N-Channel SuperFET II MOSFET».

Детали детали

Номер произв FCP190N60
Описание N-Channel SuperFET II MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

10 Pages
scroll

No Preview Available !

FCP190N60 Даташит, Описание, Даташиты
FCP190N60 / FCPF190N60
N-Channel SuperFET® II MOSFET
600 V, 20.2 A, 199 mΩ
December 2013
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 170 mΩ
• Ultra Low Gate Charge (Typ. Qg = 57 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
D
GDS
TO-220
GDS TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
S
FCP190N60 FCPF190N60
600
±20
±30
20.2 20.2*
12.7 12.7*
60.6 60.6*
400
4.0
2.1
100
20
208 39
1.67 0.31
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCP190N60
0.6
62.5
FCPF190N60
3.2
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FCP190N60 / FCPF190N60 Rev. C16
1
www.fairchildsemi.com









No Preview Available !

FCP190N60 Даташит, Описание, Даташиты
Package Marking and Ordering Information
Part Number
FCP190N60
FCPF190N60
Top Mark
FCP190N60
FCPF190N60
Package
TO-220
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
Min. Typ.
BVDSS
ΔBVDSS
/ ΔTJ
BVDS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain to Source Avalanche Breakdown
Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VGS = 0 V, ID = 10 mA, TJ = 25°C
VGS = 0 V, ID = 10 mA, TJ = 150°C
ID = 10 mA, Referenced to 25oC
VGS = 0 V, ID = 20 A
VDS = 480 V, VGS = 0 V
VDS = 480 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
600
650
-
-
-
-
-
-
-
0.67
700
-
-
-
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 10 A
VDS = 20 V, ID = 10 A
2.5 -
- 0.17
- 21
VDS = 25 V, VGS = 0 V
f = 1 MHz
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 380 V, ID = 10 A,
VGS = 10 V
(Note 4)
f = 1 MHz
-
-
-
-
-
-
-
-
-
2220
1630
85
42
160
57
9
21
1
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380 V, ID = 10 A,
VGS = 10 V, RG = 4.7 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 10 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 10 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 10 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
(Note 4)
-
-
-
-
-
-
-
-
-
20
10
64
5
-
-
-
280
3.8
Quantity
50 units
50 units
Max. Unit
-
-
V
- V/oC
-
1
10
±100
V
μA
nA
3.5
0.199
-
V
Ω
S
2950
2165
128
-
-
74
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
50 ns
30 ns
138 ns
20 ns
20.2 A
60.6 A
1.2 V
- ns
- μC
©2012 Fairchild Semiconductor Corporation
FCP190N60 / FCPF190N60 Rev. C16
2
www.fairchildsemi.com









No Preview Available !

FCP190N60 Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
50
VGS = 15.0V
10.0V
8.0V
7.0V
10
6.0V
5.5V
5.0V
4.5V
1
0.3
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
VDS, Drain to Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.5
Figure 2. Transfer Characteristics
100
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
150oC
10 25oC
-55oC
1
2345678
VGS, Gate to Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
0.4
0.3
0.2
0.1
0
VGS = 10V
VGS = 20V
*Note: TC = 25oC
10 20 30
ID, Drain Current [A]
40
50
Figure 5. Capacitance Characteristics
10000
Ciss
1000
100 Coss
*Note:
10 1. VGS = 0V
2. f = 1MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
1
Coss = Cds + Cgd
Crss = Cgd
0.5
0.1 1
10
100
VDS, Drain to Source Voltage [V]
600
150oC
25oC
10
*Notes:
1. VGS = 0V
1 2. 250μs Pulse Test
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8 VDS = 300V
VDS = 480V
6
4
2
0 *Note: ID = 10A
0 20 40 60
Qg, Total Gate Charge [nC]
©2012 Fairchild Semiconductor Corporation
FCP190N60 / FCPF190N60 Rev. C16
3
www.fairchildsemi.com










Скачать PDF:

[ FCP190N60.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
FCP190N60N-Channel SuperFET II MOSFETFairchild Semiconductor
Fairchild Semiconductor
FCP190N60EMOSFET ( Transistor )Fairchild Semiconductor
Fairchild Semiconductor
FCP190N65FN-Channel SuperFET ll FRFET MOSFETFairchild Semiconductor
Fairchild Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск