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PDF FCP125N60E Data sheet ( Hoja de datos )
| Número de pieza | FCP125N60E | |
| Descripción | N-Channel SuperFET II Easy-Drive MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FCP125N60E
N-Channel SuperFET® II Easy-Drive MOSFET
600 V, 29 A, 125 mΩ
November 2015
Features
• 650 V @TJ = 150°C
• Typ. RDS(on) = 102 mΩ
• Ultra Low Gate Charge (Typ. Qg = 75 nC)
• Low Effective Output Capacitance (Typ. Coss(eff) = 258 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Telecom / Sever Power Supplies
• Industrial Power Supplies
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy.
Consequently, SuperFET II MOSFET easy-drive series offers
slightly slower rise and fall times compared to the SuperFET II
MOSFET series. Noted by the “E” part number suffix, this family
helps manage EMI issues and allows for easier design
implementation. For faster switching in applications where
switching losses must be at an absolute minimum, please
consider the SuperFET II MOSFET series.
D
GDS TO-220
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCP125N60E
600
±20
±30
29
18
87
720
6
2.78
100
20
278
2.2
-55 to +150
300
FCP125N60E
0.45
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2015 Fairchild Semiconductor Corporation
FCP125N60E Rev. 1.0
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
1
0.5
0.1 0.2
0.1
0.05
0.01
0.02
0.01
Single pulse
0.005
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 0.45oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
t1, Rectangular Pulse Duration [sec]
1
10
©2015 Fairchild Semiconductor Corporation
FCP125N60E Rev. 1.0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FCP125N60E.PDF ] | |
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