|
|
PDF FCMT299N60 Data sheet ( Hoja de datos )
| Número de pieza | FCMT299N60 | |
| Descripción | N-Channel SuperFET II MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FCMT299N60 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
August 2014
FCMT299N60
N-Channel SuperFET® II MOSFET
600 V, 12 A, 299 mΩ
Features
• 650 V @ TJ = 150°C
• RDS(on) = 250 mΩ (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 39 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Server and Telecom Power Supplies
• Solar Inverters
• Adaptors
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as server/telecom power, adaptor and solar
inverter applications.
The Power88 package is an ultra-slim surface-mount package
(1 mm high) with a low profile and small footprint (8x8 mm2).
SuperFET II MOSFET in a Power88 package offers excellent
switching performance due to lower parasitic source inductance
and separated power and drive sources. Power88 offers Mois-
ture Sensitivity Level 1 (MSL 1).
D
S2
S2
S1
G
Power88
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S1 S2
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-DC
-AC
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (* 1 in2 pad of 2 oz copper), Max.
©2014 Fairchild Semiconductor Corporation
FCMT299N60 Rev. C0
1
S1 : Driver Source
S2 : Power Source
FCMT299N60
600
±20
±30
12
7.9
36
234
2.5
1.25
20
100
125
1
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/oC
oC
oC
FCMT299N60
1.0
45
Unit
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
2
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single pulse
0.01
10-5
PDM
t1
t2
*Notes:
1. ZθJC(t) = 1.0oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-4
10-3
t1, Rectangular Pulse Duration [sec]
10-2
FCMT299N60 Rev. C0
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FCMT299N60.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FCMT299N60 | N-Channel SuperFET II MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |