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FCMT199N60 PDF даташит

Спецификация FCMT199N60 изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «N-Channel SuperFET II MOSFET».

Детали детали

Номер произв FCMT199N60
Описание N-Channel SuperFET II MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FCMT199N60 Даташит, Описание, Даташиты
August 2014
FCMT199N60
N-Channel SuperFET® II MOSFET
600 V, 20.2 A, 199 mΩ
Features
• 650 V @ TJ = 150°C
• RDS(on) = 170 mΩ (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 57 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Server and Telecom Power Supplies
• Solar Inverters
• Adaptors
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as server/telecom power, adaptor and solar
inverter applications.
The Power88 package is an ultra-slim surface-mount package
(1 mm high) with a low profile and small footprint (8x8 mm2).
SuperFET II MOSFET in a Power88 package offers excellent
switching performance due to lower parasitic source inductance
and separated power and drive sources. Power88 offers Mois-
ture Sensitivity Level 1 (MSL 1).
D
S2
S2
S1 G
Power88
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
G
S1 S2
S1 : Driver Source
S2 : Power Source
Symbol
Parameter
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
-DC
-AC
(f > 1 Hz)
ID
IDM
EAS
IAR
EAR
dv/dt
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
FCMT199N60
600
±20
±30
20.2
12.7
60.6
400
4.0
2.1
20
100
208
1.67
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/oC
oC
oC
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (* 1 in2 pad of 2 oz copper), Max.
FCMT199N60
0.6
45
Unit
oC/W
©2014 Fairchild Semiconductor Corporation
FCMT199N60 Rev. C2
1
www.fairchildsemi.com









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FCMT199N60 Даташит, Описание, Даташиты
Package Marking and Ordering Information
Device Marking
FCMT199N60
Device
FCMT199N60
Package
Power88
Reel Size
-
Tape Width
-
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
VGS = 0 V, ID = 10 mA, TC = 25°C
VGS = 0 V, ID = 10 mA, TC = 150°C
ID = 10 mA, Referenced to 25oC
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
600
650
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 10 A
VDS = 20 V, ID = 10 A
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss eff.
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 380 V, VGS = 0 V
f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 380 V, ID = 10 A
VGS = 10 V
(Note 4)
f = 1 MHz
-
-
-
-
-
-
-
-
Typ.
-
-
0.67
-
2.2
-
-
0.170
20
2043
45
7
160
57
9
21
1
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380 V, ID = 10 A
VGS = 10 V, Rg = 4.7 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 10 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 10 A
dIF/dt = 100 A/μs
(Note 4)
-
-
-
-
-
-
-
-
-
20
10
64
5
-
-
-
320
5.1
Quantity
3000
Max. Unit
-
-
-
1
-
±100
V
V/oC
μA
nA
3.5
0.199
-
V
Ω
S
2715
60
-
-
74
-
-
-
pF
pF
pF
pF
nC
nC
nC
Ω
50 ns
30 ns
138 ns
20 ns
20.2 A
60.6 A
1.2 V
- ns
- μC
Notes:
1. Repetitive Rating: Pulse-width limited by maximum junction temperature.
2. IAS = 4 A, RG = 25 Ω, starting TJ = 25°C
3. ISD 10 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C
4. Essentially independent of operating temperature typical characteristics.
FCMT199N60 Rev. C2
2 www.fairchildsemi.com









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FCMT199N60 Даташит, Описание, Даташиты
Typical Characteristics
Figure 1. On-Region Characteristics
50
VGS = 15.0V
10.0V
8.0V
7.0V
10
6.0V
5.5V
5.0V
4.5V
1
0.3
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
VDS, Drain to Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.5
0.4
0.3
0.2
0.1
0
VGS = 10V
VGS = 20V
*Note: TC = 25oC
10 20 30
ID, Drain Current [A]
40
50
Figure 5. Capacitance Characteristics
10000
Ciss
1000
100 Coss
*Note:
10 1. VGS = 0V
2. f = 1MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
1
Coss = Cds + Cgd
Crss = Cgd
0.5
0.1 1
10
100
VDS, Drain to Source Voltage [V]
600
FCMT199N60 Rev. C2
Figure 2. Transfer Characteristics
100
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
150oC
10 25oC
-55oC
1
2345678
VGS, Gate to Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150oC
25oC
10
*Notes:
1. VGS = 0V
1 2. 250μs Pulse Test
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
*Note: ID = 10A
VDS = 120V
8
VDS = 300V
6
VDS = 480V
4
2
0
0 12 24 36 48 60
Qg, Total Gate Charge [nC]
3 www.fairchildsemi.com










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Номер в каталогеОписаниеПроизводители
FCMT199N60N-Channel SuperFET II MOSFETFairchild Semiconductor
Fairchild Semiconductor

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