|
|
PDF FCH070N60E Data sheet ( Hoja de datos )
| Número de pieza | FCH070N60E | |
| Descripción | N-Channel SuperFET II Easy-Drive MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FCH070N60E (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
FCH070N60E
N-Channel SuperFET® II Easy-Drive MOSFET
600 V, 52 A, 70 mΩ
April 2015
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 58 mΩ
• Ultra Low Gate Charge (Typ. Qg = 128 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 457 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Telecom / Sever Power Supplies
• Industrial Power Supplies
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET easy-drive series offers slightly slower
rise and fall times compared to the SuperFET II MOSFET
series. Noted by the "E" part number suffix, this family helps
manage EMI issues and allows for easier design implementa-
tion. For faster switching in applications where switching losses
must be at an absolute minimum, please consider the Super-
FET II MOSFET series.
D
G
D
S
TO-247
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCH070N60E
600
±20
±30
52
33
156
1128
9.5
4.8
100
20
481
3.85
-55 to +150
300
FCH070N60E
0.26
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2015 Fairchild Semiconductor Corporation
FCH070N60E Rev. 1.0
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
0.5
0.1
0.01
0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
0.001
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 0.26oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
t1, Rectangular Pulse Duration [sec]
10-1
1
©2015 Fairchild Semiconductor Corporation
FCH070N60E Rev. 1.0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FCH070N60E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FCH070N60E | N-Channel SuperFET II Easy-Drive MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |