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FCD620N60ZF PDF даташит

Спецификация FCD620N60ZF изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «N-Channel SuperFET II MOSFET».

Детали детали

Номер произв FCD620N60ZF
Описание N-Channel SuperFET II MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FCD620N60ZF Даташит, Описание, Даташиты
FCD620N60ZF
N-Channel SuperFET® II FRFET® MOSFET
600 V, 7.3 A, 620 mΩ
November 2013
Features
• 650 V @ TJ = 150oC
• Typ. RDS(on) = 528 mΩ
• Ultra Low Gate Charge (Typ. Qg = 20 nC)
• Low Effective output Capacitance (Typ. Coss(eff.) = 71 pF)
• 100% Avalanche Tested
• ESD Improved Capacity
• RoHS Compliant
Applications
• LCD / LED / PDP TV and Monitor Lighting
• Solar Invertor / AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications. SuperFET
II FRFET® MOSFET’s optimized body diode reverse recovery
performance can remove additional component and improve
system reliability.
D
G
S
D
D-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
- DC
- AC
(f > 1 Hz)
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FCD620N60ZF
600
±20
±30
7.3
4.6
21.9
135
1.5
0.89
100
20
89
0.71
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCD620N60ZF
1.4
100
Unit
oC/W
©2013 Fairchild Semiconductor Corporation
FCD620N60ZF Rev. C3
1
www.fairchildsemi.com









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FCD620N60ZF Даташит, Описание, Даташиты
Package Marking and Ordering Information
Part Number
FCD620N60ZF
Top Mark
FCD620N60ZF
Package Packing Method
DPAK
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
BVDS
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
VGS = 0 V, ID = 10 mA, TJ = 25°C
VGS = 0 V, ID = 10 mA, TJ = 150°C
ID = 10 mA, Referenced to 25oC
VGS = 0 V, ID = 7.3 A
VDS = 480 V, VGS = 0 V
VDS = 480 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
600
650
-
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain to Source On Resistance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 3.6 A
3
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 380 V, ID = 3.6 A,
VGS = 10 V
(Note 4)
f = 1 MHz
-
-
-
-
-
-
-
-
-
Typ.
-
-
0.6
700
-
-
-
-
0.528
855
625
30
16
71
20
4.5
7.7
2.7
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380 V, ID = 3.6 A,
VGS = 10 V, Rg = 4.7 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 3.6 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 3.6 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 1.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 3.6 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
(Note 4)
-
-
-
-
-
-
-
-
-
15
7
35
10
-
-
-
84
0.325
Quantity
2500 units
Max. Unit
-
-
V
- V/oC
-V
5
20
μA
±10 μA
5V
0.62 Ω
1135
830
45
-
-
36
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
40 ns
24 ns
80 ns
30 ns
7.3 A
21.9 A
1.2 V
- ns
- μC
©2013 Fairchild Semiconductor Corporation
FCD620N60ZF Rev. C3
2
www.fairchildsemi.com









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FCD620N60ZF Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
VGS = 15.0V
10.0V
8.0V
10 7.0V
6.5V
6.0V
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
0.4 1
10
VDS, Drain to Source Voltage[V]
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.2
*Note: TC = 25oC
1.0
0.8
0.6
0.4
0
VGS = 10V
VGS = 20V
4 8 12
ID, Drain Current [A]
16
20
Figure 5. Capacitance Characteristics
10000
1000
Ciss
100
Coss
10 *Note:
1. VGS = 0V
2. f = 1MHz
Crss
1 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1 1
10 100
VDS, Drain to Source Voltage [V]
600
Figure 2. Transfer Characteristics
25
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
10
150oC
25oC
-55oC
1
45678
VGS, Gate to Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
40
*Notes:
1. VGS = 0V
10 2. 250μs Pulse Test
150oC
25oC
1
0.1
0.2
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage [V]
1.6
Figure 6. Gate Charge Characteristics
10
*Note: ID = 3.6A
8
VDS = 120V
VDS = 300V
VDS = 480V
6
4
2
0
0 4 8 12 16 20 24
Qg, Total Gate Charge [nC]
©2013 Fairchild Semiconductor Corporation
FCD620N60ZF Rev. C3
3
www.fairchildsemi.com










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Номер в каталогеОписаниеПроизводители
FCD620N60ZFN-Channel SuperFET II MOSFETFairchild Semiconductor
Fairchild Semiconductor

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