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UTT75N03 PDF даташит

Спецификация UTT75N03 изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв UTT75N03
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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UTT75N03 Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
UTT75N03
75A, 30V, N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
POWER MOSFET
DESCRIPTION
The UTC UTT75N03 is an N-channel enhancement mode
Power MOSFET, it uses UTC’s advanced technology to provide the
customers with high switching and a minimum on-state resistance.
The UTC UTT75N03 is suitable for low voltage applications
such as DC/DC converters.
FEATURES
* RDS(ON)<4m@ VGS=10V, ID=40A
RDS(ON)<7m@ VGS=4.5V, ID=30A
* Low on-resistance
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT75N03L-TN3-R
UTT75N03G-TN3-R
UTT75N03L-TND-R
UTT75N03G-TND-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-252
TO-252D
Pin Assignment
123
GDS
GDS
Packing
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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UTT75N03 Даташит, Описание, Даташиты
UTT75N03
POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
30
±20
V
V
Drain Current
VGS=10V, TC=25°C
Continuous (Note 4)
VGS=10V, TC=100°C
ID
75 A
56 A
Pulsed (Note 1)
Total Power Dissipation
TC=25°C
TA=25°C
Operating Junction Temperature Range
IDM 300 A
PD
50 W
2W
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (PCB Mount) (Note 3)
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
2.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=30V, VGS=0V
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Static Drain-Source On-State Resistance
(Note 2)
Gate Threshold Voltage
RDS(ON)
VGS(TH)
VGS=10V, ID=40A
VGS=4.5V, ID=30A
VDS=VGS, ID=250µA
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
Rise Time
Turn-OFF Delay Time
Fall Time
CISS
COSS
CRSS
RG
VGS=0V, VDS=25V, f=1.0MHz
f=1.0MHz
tD(ON)
tR
tD(OFF)
tF
VDS=15V, ID=0.25A, RG=25
VGS=10V
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward On Voltage (Note 2)
VSD IS=40A, VGS=0V
Notes: 1. Pulse width limited by max. junction temperature
2. Pulse test
3. Surface mounted on 1 in2 copper pad of FR4 board
4. Package limitation current is 75A
MIN TYP MAX UNIT
30 V
10 µA
+100 nA
-100 nA
4 m
7 m
1 3V
3900
640
510
1.5
pF
pF
pF
78
140
1100
530
ns
ns
ns
ns
1.2 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTT75N03 Даташит, Описание, Даташиты
UTT75N03
TEST CIRCUITS AND WAVEFORMS
POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R205-046.B










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Номер в каталогеОписаниеПроизводители
UTT75N03N-CHANNEL ENHANCEMENT MODE POWER MOSFETUnisonic Technologies
Unisonic Technologies

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