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UF3808 PDF даташит

Спецификация UF3808 изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «75V N-CHANNEL POWER MOSFET».

Детали детали

Номер произв UF3808
Описание 75V N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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UF3808 Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
UF3808
Preliminary
140A, 75V N-CHANNEL
POWER MOSFET
POWER MOSFET
DESCRIPTION
The UTC UF3808 is an N-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC UF3808 is suitable for Automotive applications and
Anti-lock Braking System (ABS), etc.
FEATURES
* RDS(ON)<8.0m@ VGS=10V
* High Switching Speed
* Dynamic dv/dt Rating
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF3808L-TA3-T
UF3808G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
Pin Assignment
123
GDS
Packing
Tube
UF3808L-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TA3: TO-220
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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UF3808 Даташит, Описание, Даташиты
UF3808
Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
75
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous VGS=10V, TC=25°C
(Note 6) VGS=10V, TC=100°C
ID
140 A
97 A
Pulsed (Note 5) IDM 550 A
Avalanche Current (Note 5)
IAR 82 A
Avalanche Energy Single Pulse (Note 3)
EAS
430 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
5.5 V/ns
Power Dissipation (TC=25°C)
Linear Derating Factor
PD
330 W
2.2 W/°C
Junction Temperature
TJ
-55~+175
°C
Storage Temperature Range
TSTG
-55~+175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area.
3. L=0.13mH, IAS=82A, VDD=38V, RG=25 , Starting TJ = 25°C
4. ISD82A, di/dt310A/μs, VDD BVDSS, Starting TJ = 25°C
5. Repetitive rating; pulse width limited by max. junction temperature.
6. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62
0.45
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF3808 Даташит, Описание, Даташиты
UF3808
Preliminary
POWER MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS VGS=0V, ID=250µA
BVDSS/TJ Reference to 25°C, ID=1mA
75
0.086
V
V/°C
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
IDSS
VDS=75V, VGS=0V
VDS=60V, VGS=0V, TJ=150°C
IGSS
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
20
250
200
-200
µA
µA
nA
nA
ON CHARACTERISTICS
Static Drain-Source On-State Resistance
(Note 1)
RDS(ON) VGS=10V, ID=82A
8.0 m
Gate Threshold Voltage
Forward Transconductance
VGS(TH) VDS=10V ID=250µA
gFS VDS=25V, ID=82A
2.0 4.0 V
100 S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
1510
780
350
pF
pF
pF
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain ("Miller") Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=50V, ID=1.3A
IG=100μA (Note 1)
VDD=30V, ID=1A, RG=25
VGS=10V (Note 1)
138
41
27
170
440
1000
480
160
nC
nC
nC
ns
ns
ns
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous Source
Current (Note 1)
IS
140 A
Maximum Body-Diode Pulsed Current
(Note 3)
ISM
550 A
Drain-Source Diode Forward Voltage
VSD
TJ=25°C, IS=82A, VGS=0V
(Note 1)
1.3 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR TJ=25°C, IF=82A, dI/dt=100A/μs
QRR (Note 1)
93 140 ns
340 510 nC
Notes: 1. Pulse width 400µs; duty cycle 2%.
2. COSS eff. is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 80%
VDSS.
3. Repetitive rating; pulse width limited by max. junction temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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