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TA6F15A PDF даташит

Спецификация TA6F15A изготовлена ​​​​«Vishay» и имеет функцию, называемую «TVS Diode ( Rectifier )».

Детали детали

Номер произв TA6F15A
Описание TVS Diode ( Rectifier )
Производители Vishay
логотип Vishay логотип 

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TA6F15A Даташит, Описание, Даташиты
www.vishay.com
TA6F6.8A thru TA6F51A
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
SlimSMATM
Top View
Bottom View
DO-221AC
PRIMARY CHARACTERISTICS
VBR
VWM
PPPM (10 x 1000 μs)
PD at TM = 65 °C
TJ max.
Polarity
6.8 V to 51 V
5.8 V to 43.6 V
600 W
6W
185 °C
Uni-directional
Package
DO-221AC (SlimSMA)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
FEATURES
• Very low profile - typical height of 0.95 mm
• Junction passivation optimzed design passivated
anisotropic rectifier technology
• TJ = 185 °C capability suitable for high reliability
and automotive requirement
• Ideal for automated placement
• Uni-directional only
• Excellent clamping capability
• Peak pulse power: 600 W (10/1000 μs)
• AEC-Q101 qualified
• ESD capability: IEC 61000-4-2 level 4
- 15 kV (air)
- 8 kV (contact)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-221AC (SlimSMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Peak pulse power dissipation
with a 10/1000 μs waveform
Peak pulse current
with a 10/1000 μs waveform
Power dissipation on infinite heatsink, TM = 65 °C
Power dissipation, TM = 25 °C
PPPM (1)
IPPM (1)
PD (2)
PD (3)
Operating junction and storage temperature range
TJ , TSTG
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.
(2) Power dissipation mounted on infinite heatsink
(3) Power dissipation mounted on minimum recommended pad layout
VALUE
600
See next table
6
1.1
-65 to +185
UNIT
W
A
W
°C
Revision: 08-Oct-13
1 Document Number: 89939
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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TA6F15A Даташит, Описание, Даташиты
www.vishay.com
TA6F6.8A thru TA6F51A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR (1) AT IT
(V)
MIN. MAX.
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
IR
(μA)
TJ = 150 °C
MAXIMUM
REVERSE
LEAKAGE AT
VWM
IR
(μA)
TA6F6.8A
TA6F7.5A
TA6F8.2A
TA6F9.1A
TA6F10A
TA6F11A
TA6F12A
TA6F13A
TA6F15A
TA6F16A
TA6F18A
TA6F20A
TA6F22A
TA6F24A
TA6F27A
TA6F30A
TA6F33A
TA6F36A
TA6F39A
TA6F43A
TA6F47A
TA6F51A
AEP
AGP
AKP
AMP
APP
ARP
ATP
AVP
AXP
AZP
BEP
BGP
BKP
BMP
BPP
BRP
BTP
BVP
BXP
BZP
CEP
CGP
6.45 7.14
7.13 7.88
7.79 8.61
8.65 9.55
9.5 10.5
10.5 11.6
11.4 12.6
12.4 13.7
14.3 15.8
15.2 16.8
17.1 18.9
19.0 21.0
20.9 23.1
22.8 25.2
25.7 28.4
28.5 31.5
31.4 34.7
34.2 37.8
37.1 41.0
40.9 45.2
44.7 49.4
48.5 53.6
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.80
6.40
7.02
7.78
8.55
9.40
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
500
250
100
25
5.0
2.0
2.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1000
500
200
50
20
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10.0
10.0
10.0
Note
(1) Pulse test: tp 50 ms
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM
(A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC
(V)
57.1 10.5
53.1 11.3
49.6 12.1
44.8 13.4
41.4 14.5
38.5 15.6
35.9 16.7
33.0 18.2
28.3 21.2
26.7 22.5
23.5 25.5
21.7 27.7
19.6 30.6
18.1 33.2
16.0 37.5
14.5 41.4
13.1 45.7
12.0 49.9
11.1 53.9
10.1 59.3
9.3 64.8
8.6 70.1
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to mount
RJA (1)
RJM(2)
Notes
(1) Mounted on minimum recommended pad layout
(2) Mounted on infinite heatsink
VALUE
145
20
UNIT
°C/W
°C/W
IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS
(TA = 25 °C unless otherwise noted)
STANDARD
TEST TYPE
TEST CONDITIONS SYMBOL CLASS
IEC 61000-4-2
Human body model (contact mode)
C = 150 pF, R = 330
Human body model (air discharge mode)
VC
4
VALUE
> 8 kV
> 15 kV
ORDERING INFORMATION (Example)
PREFERRED P/N
TA6F6.8AHM3/6A (1)
TA6F6.8AHM3/6B (1)
UNIT WEIGHT (g)
0.032
0.032
PREFERRED PACKAGE CODE
6A
6B
Note
(1) AEC-Q101 qualified
BASE QUANTITY
3500
14 000
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 08-Oct-13
2 Document Number: 89939
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









No Preview Available !

TA6F15A Даташит, Описание, Даташиты
www.vishay.com
TA6F6.8A thru TA6F51A
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100 10 000
10
1
0.1
1
10 100 1000
td - Pulse Width (μs)
Fig. 1 - Peak Pulse Power Rating Curve
10 000
1000
Measured at Zero Bias
Measured at Stand-off
Voltage, VWM
100
10
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10 100
VBR - Break-down Voltage (V)
Fig. 4 - Typical Junction Capacitance
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TJ - Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
150
100
50
0
0
tr = 10 μs
Peak Value
IPPM
TJ = 25 °C
Pulse Width (td) is
defined as the Point
Where the Peak Current
decays to 50 % of IPPM
Half Value - IPP
IPPM
2
td = 1000 μs
td
1.0 2.0 3.0 4.0
t - Time (ms)
Fig. 3 - Pulse Waveform
7
6
TA=TM, mounted on inifinite
heatsink
5
4
3
2 FR-4 Board, on Minimum
Recommended Pad Layout
1
0
0 25 50 75 100 125 150 175 200
TA - Ambient Temperature (°C)
Fig. 5 - Power Dissipation Derating Curve
1000
100
10
1
0.01 0.1 1 10 100 1000
tp - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 08-Oct-13
3 Document Number: 89939
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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