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SM8S16AT PDF даташит

Спецификация SM8S16AT изготовлена ​​​​«Vishay» и имеет функцию, называемую «TVS Diode ( Rectifier )».

Детали детали

Номер произв SM8S16AT
Описание TVS Diode ( Rectifier )
Производители Vishay
логотип Vishay логотип 

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SM8S16AT Даташит, Описание, Даташиты
www.vishay.com
SM8S10AT thru SM8S43AT
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
DO-218 Compatible
PRIMARY CHARACTERISTICS
VBR
PPPM (10 x 1000 μs)
PPPM (10 x 10 000 μs)
PD
VWM
IFSM
TJ max.
Polarity
11.1 V to 52.8 V
6600 W
5200 W
8W
10 V to 43 V
700 A
175 °C
Uni-directional
Package
DO-218AC
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AC
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
with 10/1000 μs waveform
with 10/10 000 μs waveform
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
Note
(1) Non-repetitive current pulse derated above TA = 25 °C
SYMBOL
PPPM
PD
IPPM (1)
IFSM
TJ, TSTG
VALUE
6600
5200
8.0
See next table
700
-55 to +175
UNIT
W
W
A
A
°C
Revision: 20-Mar-15
1 Document Number: 87734
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SM8S16AT Даташит, Описание, Даташиты
www.vishay.com
SM8S10AT thru SM8S43AT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
DEVICE
TYPE
BREAKDOWN
VOLTAGE
VBR (V)
MIN. MAX.
TEST STAND-OFF
CURRENT VOLTAGE
IT
(mA)
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA)
MAXIMUM REVERSE
LEAKAGE
AT VWM
TJ = 175 °C
ID (μA)
SM8S10AT 11.1 12.3
5.0
10.0
15
250
MAX. PEAK
PULSE CURRENT
AT 10/1000 μs
WAVEFORM
(A)
388
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
17.0
SM8S11AT 12.2 13.5
5.0
11.0
10
150
363 18.2
SM8S12AT 13.3 14.7
5.0
12.0
10
150
332 19.9
SM8S13AT 14.4 15.9
5.0
13.0
10
150
307 21.5
SM8S14AT 15.6 17.2
5.0
14.0
10
150
284 23.2
SM8S15AT 16.7 18.5
5.0
15.0
10
150
270 24.4
SM8S16AT 17.8 19.7
5.0
16.0
10
150
254 26.0
SM8S17AT 18.9 20.9
5.0
17.0
10
150
239 27.6
SM8S18AT 20.0 22.1
5.0
18.0
10
150
226 29.2
SM8S20AT 22.2 24.5
5.0
20.0
10
150
204 32.4
SM8S22AT 24.4 26.9
5.0
22.0
10
150
186 35.5
SM8S24AT 26.7 29.5
5.0
24.0
10
150
170 38.9
SM8S26AT 28.9 31.9
5.0
26.0
10
150
157 42.1
SM8S28AT 31.1 34.4
5.0
28.0
10
150
145 45.4
SM8S30AT 33.3 36.8
5.0
30.0
10
150
136 48.4
SM8S33AT 36.7 40.6
5.0
33.0
10
150
124 53.3
SM8S36AT 40.0 44.2
5.0
36.0
10
150
114 58.1
SM8S40AT 44.4 49.1
5.0
40
10
150
102 64.5
SM8S43AT 47.8 52.8
5.0
43
10
150
95.1 69.4
Note
• For all types maximum VF = 1.8 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to case
RJC
VALUE
0.90
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
SM8S10ATHE3/I (1)
2.605
I
Note
(1) AEC-Q101 qualified
BASE QUANTITY
750
DELIVERY MODE
13" diameter plastic tape and reel,
anode towards the sprocket hole
Revision: 20-Mar-15
2 Document Number: 87734
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









No Preview Available !

SM8S16AT Даташит, Описание, Даташиты
www.vishay.com
SM8S10AT thru SM8S43AT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
8.0 10 000
6.0
4.0
2.0
0
0 50 100 150 200
Case Temperature (°C)
Fig. 1 - Power Derating Curve
6000
5000
4000
3000
2000
1000
0
25
50 75 100 125 150
Case Temperature (°C)
175
Fig. 2 - Load Dump Power Characteristics
(10 ms Exponential Waveform)
150
tr = 10 μs
Peak Value
IPPM
100
TJ = 25 °C
Pulse Width (td) is
Defined as the Point
Where the Peak Current
Decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50
td
0
0 10 20 30
t - Time (ms)
Fig. 3 - Pulse Waveform
40
1000
10
100
Pulse Width (ms) - ½ IPP Exponential Waveform
Fig. 4 - Reverse Power Capability
100
10
1
RθJA
RθJC
0.1
0.01
0.01
0.1 1 10
t - Pulse Width (s)
100
Fig. 5 - Typical Transient Thermal Impedance
100 000
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at Zero Bias
1000
10
Measured at Stand-Off
Voltage VWM
15 20 25 30 35 40
VWM - Reverse Stand-Off Voltage (V)
45
Fig. 6 - Typical Junction Capacitance
Revision: 20-Mar-15
3 Document Number: 87734
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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