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IPLU300N04S4-R8 PDF даташит

Спецификация IPLU300N04S4-R8 изготовлена ​​​​«Infineon» и имеет функцию, называемую «Power-Transistor».

Детали детали

Номер произв IPLU300N04S4-R8
Описание Power-Transistor
Производители Infineon
логотип Infineon логотип 

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IPLU300N04S4-R8 Даташит, Описание, Даташиты
IPLU300N04S4-R8
OptiMOS-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant); 100% lead free
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
VDS
RDS(on)
ID
40 V
0.77 mW
300 A
H-PSOF-8-1
Tab
8
1 Tab
1
8
Type
IPLU300N04S4-R8
Package
H-PSOF-8-1
Marking
4N04R8
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D=150 A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
Value
300
300
1200
750
300
±20
429
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-08-12









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IPLU300N04S4-R8 Даташит, Описание, Даташиты
IPLU300N04S4-R8
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
-
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 0.35 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS
V GS=0 V,
I D=1 mA
V GS(th) V DS=V GS, I D=230 µA
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
V DS=18 V, V GS=0 V,
T j=85 °C2)
I GSS
RDS(on)
V GS=20 V, V DS=0 V
V GS=10 V, I D=100 A
40
2.0
-
-
-
-
- -V
3.0 4.0
0.1 10 µA
1 20
- 100 nA
0.53 0.77 mΩ
Rev. 1.0
page 2
2014-08-12









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IPLU300N04S4-R8 Даташит, Описание, Даташиты
IPLU300N04S4-R8
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=20 V, V GS=10 V,
I D=300 A, R G=3.5 W
-
-
-
-
-
-
-
17650 22945 pF
3790 4930
130 300
50 - ns
22 -
68 -
61 -
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd V DD=32 V, I D=300 A,
Q g V GS=0 to 10 V
V plateau
-
-
-
-
77 100 nC
27 68
221 287
4.4 - V
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
IS
I S,pulse
T C=25 °C
- - 300 A
- - 1200
Diode forward voltage
V SD
V GS=0 V, I F=100 A,
T j=25 °C
-
0.9 1.3 V
Reverse recovery time2)
Reverse recovery charge2)
t rr V R=20 V, I F=50A,
Q rr di F/dt =100 A/µs
- 85 - ns
- 132 - nC
1) Current is limited by bondwire; with an R thJC = 0.35 K/W the chip is able to carry 697A at 25°C.
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2014-08-12










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