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IPB120N10S4-03 PDF даташит

Спецификация IPB120N10S4-03 изготовлена ​​​​«Infineon» и имеет функцию, называемую «Power-Transistor».

Детали детали

Номер произв IPB120N10S4-03
Описание Power-Transistor
Производители Infineon
логотип Infineon логотип 

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IPB120N10S4-03 Даташит, Описание, Даташиты
IPB120N10S4-03
IPI120N10S4-03, IPP120N10S4-03
OptiMOS®-T2 Power-Transistor
Product Summary
VDS
RDS(on),max (SMD version)
Features
ID
• N-channel - Normal Level - Enhancement mode
• AEC Q101 qualified
PG-TO263-3-2
PG-TO262-3-1
100 V
3.5 mW
120 A
PG-TO220-3-1
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
IPB120N10S4-03
IPI120N10S4-03
IPP120N10S4-03
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N1003
4N1003
4N1003
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=60A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
120
120
480
770
120
±20
250
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-06-30









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IPB120N10S4-03 Даташит, Описание, Даташиты
IPB120N10S4-03
IPI120N10S4-03, IPP120N10S4-03
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC -
- - 0.6 K/W
Thermal resistance, junction -
ambient, leaded
R thJA
-
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
100 -
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=180µA
2.0
2.7
3.5
Zero gate voltage drain current
I DSS
V DS=100V, V GS=0V
-
0.1
1 µA
V DS=100V, V GS=0V,
T j=125°C2)
-
10 100
Gate-source leakage current
Drain-source on-state resistance
I GSS
V GS=20V, V DS=0V
R DS(on) V GS=10V, I D=100A
- - 100 nA
- 3.4 3.9 mW
V GS=10V, I D=100A, - 3.0 3.5
SMD version
Rev. 1.0
page 2
2014-06-30









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IPB120N10S4-03 Даташит, Описание, Даташиты
Parameter
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
IPB120N10S4-03
IPI120N10S4-03, IPP120N10S4-03
Conditions
min.
Values
typ.
Unit
max.
C iss
C oss
Crss
V GS=0V, V DS=25V,
f =1MHz
- 7780 10120 pF
- 2460 3200
- 150 300
t d(on)
- 20 - ns
tr
V DD=50V, V GS=10V,
-
10
-
t d(off)
I D=120A, R G=3.5W
-
45
-
t f - 40 -
Q gs - 36 47 nC
Q gd V DD=80V, I D=120A, - 21 42
Q g V GS=0 to 10V
- 108 140
V plateau
- 4.7 - V
IS
I S,pulse
T C=25°C
V SD
V GS=0V, I F=100A,
T j=25°C
t rr
V R=50V, I F=50A,
di F/dt =100A/µs
- - 120 A
- - 480
- 1.0 1.3 V
- 80 - ns
Reverse recovery charge2)
Q rr
- 170 - nC
1) Current is limited by bondwire; with an R thJC = 0.6K/W the chip is able to carry 186A at 25°C.
2) Specified by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2014-06-30










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