DataSheet26.com

IPG16N10S4L-61A PDF даташит

Спецификация IPG16N10S4L-61A изготовлена ​​​​«Infineon» и имеет функцию, называемую «Power-Transistor».

Детали детали

Номер произв IPG16N10S4L-61A
Описание Power-Transistor
Производители Infineon
логотип Infineon логотип 

9 Pages
scroll

No Preview Available !

IPG16N10S4L-61A Даташит, Описание, Даташиты
OptiMOS-T2 Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
IPG16N10S4L-61A
Product Summary
VDS
RDS(on),max3)
ID
100 V
61 mW
16 A
PG-TDSON-8-10
Type
IPG16N10S4L-61A
Package
PG-TDSON-8-10
Marking
4N10L61
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
one channel active
I D T C=25 °C, V GS=10 V
Pulsed drain current1)
one channel active
Avalanche energy, single pulse1, 3)
Avalanche current, single pulse3)
Gate source voltage
Power dissipation
one channel active
T C=100 °C,
V GS=10 V1)
I D,pulse -
E AS
I AS
V GS
I D=8A
-
-
P tot T C=25 °C
Operating and storage temperature T j, T stg -
Value
16
11
64
33
10
±16
29
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-06-30









No Preview Available !

IPG16N10S4L-61A Даташит, Описание, Даташиты
IPG16N10S4L-61A
Parameter
Symbol
Conditions
Thermal characteristics1, 3)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
-
minimal footprint
6 cm2 cooling area2)
min.
Values
typ.
Unit
max.
- - 5.2 K/W
- 100 -
- 60 -
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V (BR)DSS V GS=0V, I D=1mA
V GS(th) V DS=V GS, I D=9µA
100 -
-V
1.1 1.6 2.1
Zero gate voltage drain current3)
I DSS
V DS=100V, V GS=0V,
T j=25°C
-
0.01
1 µA
Gate-source leakage current3)
Drain-source on-state resistance3)
V DS=100V, V GS=0V,
T j=125°C2)
I GSS
V GS=16V, V DS=0V
R DS(on) V GS=4.5V, I D=8A
V GS=10 V, I D=16 A
-
-
-
-
1 100
- 100 nA
60 78 mW
47 61
Rev. 1.0
page 2
2014-06-30









No Preview Available !

IPG16N10S4L-61A Даташит, Описание, Даташиты
IPG16N10S4L-61A
Parameter
Dynamic characteristics1)
Input capacitance3)
Output capacitance3)
Reverse transfer capacitance3)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics1, 3)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current1)
one channel active
Diode pulse current1)
one channel active
Diode forward voltage
Reverse recovery time1)
Symbol
Conditions
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0V, V DS=25V,
f =1MHz
V DD=50V, V GS=10V,
I D=16A, R G=3.5W
Q gs
Q gd V DD=80V, I D=16A,
Q g V GS=0 to 10V
V plateau
IS
I S,pulse
T C=25°C
V SD
V GS=0V, I F=16A,
T j=25°C
t rr
V R=50V, I F=I S,
di F/dt =100A/µs
min.
Values
typ.
Unit
max.
- 650 845 pF
- 165 215
- 12 36
- 2 - ns
-1-
-5-
-4-
- 2.3 3.0 nC
- 1.3 3.6
- 8.5 11
- 3.7 - V
- - 16 A
- - 64
- 1.0 1.3 V
- 50 - ns
Reverse recovery charge1, 3)
Q rr
- 80 - nC
1) Specified by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) Per channel
Rev. 1.0
page 3
2014-06-30










Скачать PDF:

[ IPG16N10S4L-61A.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
IPG16N10S4L-61APower-TransistorInfineon
Infineon

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск