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IPD50N08S4-13 PDF даташит

Спецификация IPD50N08S4-13 изготовлена ​​​​«Infineon» и имеет функцию, называемую «Power-Transistor».

Детали детали

Номер произв IPD50N08S4-13
Описание Power-Transistor
Производители Infineon
логотип Infineon логотип 

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IPD50N08S4-13 Даташит, Описание, Даташиты
OptiMOS-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD50N08S4-13
Product Summary
VDS
RDS(on),max
ID
80 V
13.2 mW
50 A
PG-TO252-3-313
Type
IPD50N08S4-13
Package
Marking
PG-TO252-3-313 4N0813
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=25A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
50
50
200
76
31
±20
72
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-06-30









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IPD50N08S4-13 Даташит, Описание, Даташиты
IPD50N08S4-13
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
-
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 2.1 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=33µA
I DSS
V DS=80V, V GS=0V,
T j=25°C
V DS=80V, V GS=0V,
T j=125°C2)
I GSS
V GS=20V, V DS=0V
R DS(on) V GS=10V, I D=50A
80 -
-V
2.0 3.0 4.0
- 0.01 1 µA
- 5 100
- - 100 nA
- 11.2 13.2 mW
Rev. 1.0
page 2
2014-06-30









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IPD50N08S4-13 Даташит, Описание, Даташиты
IPD50N08S4-13
Parameter
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
Diode pulse current1)
Diode forward voltage
Reverse recovery time1)
Symbol
Conditions
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0V, V DS=25V,
f =1MHz
V DD=40V, V GS=10V,
I D=50A, R G=3.5W
Q gs
Q gd V DD=64V, I D=50A,
Q g V GS=0 to 10V
V plateau
IS
I S,pulse
T C=25°C
V SD
V GS=0V, I F=50A,
T j=25°C
t rr
V R=50V, I F=I S,
di F/dt =100A/µs
min.
Values
typ.
Unit
max.
- 1316 1711 pF
- 511 664
- 29 58
- 5.0 - ns
- 3.6 -
- 6.4 -
- 11.8 -
- 6.9 9.0 nC
- 4.5 9
- 19 30
- 5.0 - V
- - 50 A
- - 200
- 0.9 1.3 V
- 74 - ns
Reverse recovery charge1)
Q rr
- 49 - nC
1) Current is limited by bondwire; with an R thJC = 2.1K/W the chip is able to carry 85A at 25°C.
2) Specified by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2014-06-30










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Номер в каталогеОписаниеПроизводители
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