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PDF IPI80N07S4-05 Data sheet ( Hoja de datos )
| Número de pieza | IPI80N07S4-05 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPI80N07S4-05 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS™-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB80N07S4-05
IPI80N07S4-05, IPP80N07S4-05
Product Summary
VDS
RDS(on),max (SMD version)
ID
75 V
5.2 mW
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80N07S4-05
IPI80N07S4-05
IPP80N07S4-05
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0705
4N0705
4N0705
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=40A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
80
80
320
240
65
±20
150
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-07-14
1 page  
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; SMD
parameter: V GS
320
10 V
7V
240
160
80
0
0123
VDS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
320
IPB80N07S4-05
IPI80N07S4-05, IPP80N07S4-05
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS
13
5V
5.5 V
6V
6.5 V
7V
11
6.5 V
9
6V 7
5.5 V
5V
5
10 V
45
3
0
80 160 240 320
ID [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD
-55 °C
10
240 8
25 °C
175 °C
160 6
80 4
0
3
Rev. 1.0
456
VGS [V]
72
-60 -20 20 60 100 140 180
Tj [°C]
page 5
2014-07-14
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPI80N07S4-05.PDF ] | |
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