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IPB80N07S4-05 PDF даташит

Спецификация IPB80N07S4-05 изготовлена ​​​​«Infineon» и имеет функцию, называемую «Power-Transistor».

Детали детали

Номер произв IPB80N07S4-05
Описание Power-Transistor
Производители Infineon
логотип Infineon логотип 

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IPB80N07S4-05 Даташит, Описание, Даташиты
OptiMOS-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB80N07S4-05
IPI80N07S4-05, IPP80N07S4-05
Product Summary
VDS
RDS(on),max (SMD version)
ID
75 V
5.2 mW
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80N07S4-05
IPI80N07S4-05
IPP80N07S4-05
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0705
4N0705
4N0705
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=40A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
80
80
320
240
65
±20
150
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-07-14









No Preview Available !

IPB80N07S4-05 Даташит, Описание, Даташиты
IPB80N07S4-05
IPI80N07S4-05, IPP80N07S4-05
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
-
-
- - 1.0 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=90µA
I DSS
V DS=75V, V GS=0V
V DS=75V, V GS=0V,
T j=125°C2)
I GSS
V GS=20V, V DS=0V
R DS(on) V GS=10V, I D=80A
V GS=10V, I D=80A,
SMD version
75 -
-V
2.0 3.0 4.0
- 0.01 1 µA
- 10 200
- - 100 nA
- 4.8 5.5 mW
- 4.5 5.2
Rev. 1.0
page 2
2014-07-14









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IPB80N07S4-05 Даташит, Описание, Даташиты
Parameter
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
Conditions
IPB80N07S4-05
IPI80N07S4-05, IPP80N07S4-05
min.
Values
typ.
Unit
max.
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0V, V DS=25V,
f =1MHz
V DD=37.5V, V GS=10V,
I D=80A, R G=3.5W
-
-
-
-
-
-
-
3600
1080
75
13
8
20
25
4800 pF
1440
150
- ns
-
-
-
Q gs
Q gd V DD=60V, I D=80A,
Q g V GS=0 to 10V
V plateau
- 19 25 nC
- 12 24
- 52 69
- 5.5 - V
IS
I S,pulse
T C=25°C
V SD
V GS=0V, I F=80A,
T j=25°C
t rr
V R=37.5V, I F=50A,
di F/dt =100A/µs
- - 80 A
- - 320
- 0.9 1.3 V
- 90 - ns
Reverse recovery charge2)
Q rr
- 60 - nC
1) Current is limited by bondwire; with an R thJC = 1.0K/W the chip is able to carry 122A at 25°C.
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2014-07-14










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Номер в каталогеОписаниеПроизводители
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