DataSheet26.com

IPI120N08S4-03 PDF даташит

Спецификация IPI120N08S4-03 изготовлена ​​​​«Infineon» и имеет функцию, называемую «Power-Transistor».

Детали детали

Номер произв IPI120N08S4-03
Описание Power-Transistor
Производители Infineon
логотип Infineon логотип 

9 Pages
scroll

No Preview Available !

IPI120N08S4-03 Даташит, Описание, Даташиты
OptiMOS-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
Product Summary
V DS
R DS(on),max (SMD version)
ID
80 V
2.5 mW
120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB120N08S4-03
IPI120N08S4-03
IPP120N08S4-03
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0803
4N0803
4N0803
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=60A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
120
120
480
920
120
±20
278
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-06-20









No Preview Available !

IPI120N08S4-03 Даташит, Описание, Даташиты
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
-
-
- - 0.54 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
80 -
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=223µA
2.0
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=80V, V GS=0V
- 0.01 1 µA
V DS=80V, V GS=0V,
T j=125°C2)
-
10 200
Gate-source leakage current
Drain-source on-state resistance
I GSS
V GS=20V, V DS=0V
R DS(on) V GS=10V, I D=100A
- - 100 nA
- 2.4 2.8 mW
V GS=10V, I D=100A, - 2.1 2.5
SMD version
Rev. 1.0
page 2
2014-06-20









No Preview Available !

IPI120N08S4-03 Даташит, Описание, Даташиты
Parameter
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
Conditions
min.
Values
typ.
Unit
max.
C iss
C oss
Crss
V GS=0V, V DS=25V,
f =1MHz
- 8884 11550 pF
- 3435 4465
- 177 354
t d(on)
- 30 - ns
tr
V DD=40V, V GS=10V,
-
15
-
t d(off)
I D=120A, R G=3.5W
-
60
-
t f - 50 -
Q gs - 43 57 nC
Q gd V DD=64V, I D=120A,
-
27 55
Q g V GS=0 to 10V
- 128 167
V plateau
- 4.9 - V
IS
I S,pulse
T C=25°C
V SD
V GS=0V, I F=100A,
T j=25°C
t rr
V R=40V, I F=50A,
di F/dt =100A/µs
- - 120 A
- - 480
- 0.9 1.3 V
- 80 - ns
Reverse recovery charge2)
Q rr
- 160 - nC
1) Current is limited by bondwire; with an R thJC = 0.54K/W the chip is able to carry 245A at 25°C.
2) Specified by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2014-06-20










Скачать PDF:

[ IPI120N08S4-03.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
IPI120N08S4-03Power-TransistorInfineon
Infineon
IPI120N08S4-04Power-TransistorInfineon
Infineon

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск