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IPA50R280CE PDF даташит

Спецификация IPA50R280CE изготовлена ​​​​«Infineon» и имеет функцию, называемую «MOSFET ( Transistor )».

Детали детали

Номер произв IPA50R280CE
Описание MOSFET ( Transistor )
Производители Infineon
логотип Infineon логотип 

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IPA50R280CE Даташит, Описание, Даташиты
IPA50R280CE
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
0.28
ID 18.1 A
Qg,typ
32.6
nC
ID,pulse
42.9
A
Eoss @ 400V
3.2
µJ
Type/OrderingCode
IPA50R280CE
Package
PG-TO 220 FullPAK
Marking
5R280CE
PG-TO220FP
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.4,2016-07-12









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IPA50R280CE Даташит, Описание, Даташиты
500VCoolMOSªCEPowerTransistor
IPA50R280CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2 Rev.2.4,2016-07-12









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IPA50R280CE Даташит, Описание, Даташиты
500VCoolMOSªCEPowerTransistor
IPA50R280CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
ID
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
ID,pulse
EAS
EAR
IAR
dv/dt
Gate source voltage
VGS
Power disspiation (Full PAK)
Ptot
Operating and storage temperature Tj,Tstg
Mounting torque
-
Continuous diode forward current
IS
Diode pulse current2)
IS,pulse
Reverse diode dv/dt3)
dv/dt
Maximum diode commutation speed3) dif/dt
Insulation
FullPAK
withstand
voltage
for
TO-220
VISO
Min.
-
-
-
-
-
-
-
-20
-30
-
-40
-
-
-
-
-
-
Values
Typ. Max.
- 18.1
- 11.4
- 42.9
- 231
- 0.35
- 5.2
- 50
- 20
- 30
- 30.4
- 150
- 50
- 6.5
- 42.9
- 15
- 500
- 2500
Unit Note/TestCondition
A
TC = 25°C
TC = 100°C
A TC=25°C
mJ ID =5.2A; VDD = 50V
mJ ID =5.2A; VDD = 50V
A-
V/ns VDS=0...400V
V
static;
AC (f>1 Hz)
W TC=25°C
°C -
Ncm M2.5 screws
A TC=25°C
A
V/ns
A/µs
TC = 25°C
VDS=0...400V,ISD<=IS,Tj=25°C
VDS=0...400V,ISD<=IS,Tj=25°C
V Vrms,TC=25°C,t=1min
2Thermalcharacteristics
Table3ThermalcharacteristicsTO-220FullPAK
Parameter
Symbol
Values
Min. Typ. Max.
Thermal resistance, junction - case RthJC
Thermal resistance, junction - ambient RthJA
- - 4.11
- - 80
Soldering temperature, wavesoldering
only allowed at leads
Tsold
- - 260
Unit Note/TestCondition
°C/W -
°C/W leaded
°C 1.6mm (0.063 in.) from case for 10s
1) Limited by Tj max <150°C, Maximum Duty Cycle D = 0.5, TO220 equivalent
2) Pulse width tp limited by Tj,max
3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
Final Data Sheet
3
Rev.2.4,2016-07-12










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Номер в каталогеОписаниеПроизводители
IPA50R280CEMOSFET ( Transistor )Infineon
Infineon

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