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MGBR15L30 PDF даташит

Спецификация MGBR15L30 изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «MOS GATED BARRIER RECTIFIER».

Детали детали

Номер произв MGBR15L30
Описание MOS GATED BARRIER RECTIFIER
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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MGBR15L30 Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO.,LTD
MGBR15L30
Preliminary
MOS GATED BARRIER
RECTIFIER
DESCRIPTION
The UTC MGBR15L30 is a surface mount mos gatedbarrier
rectifier,it uses UTC’s advanced technology to provide customers
withlow forward voltage drop and high switching speed, etc.
FEATURES
* Low forward voltage drop
* High switching speed
SYMBOL
DIODE
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MGBR15L30L-T27-R
MGBR15L30G-T27-R
Note: Pin Assignment: A: Anode K: Common Cathode
Package
TO-277
Pin Assignment
123
AKA
MGBR15L30L-T27-R
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) T27: TO-227
(3)Lead Free
(3) L: Lead Free, G: Halogen Free
Packing
Tape Reel
MARKING INFORMATION
PACKAGE
TO-277
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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MGBR15L30 Даташит, Описание, Даташиты
MGBR15L30
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS(TA=25°C, unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load,derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
WorkingPeak Reverse Voltage
VRM
VRWM
30
30
V
V
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
VRRM
VR(RMS)
30
21
V
V
Average Rectified Output Current
TC=140°C
IO
15 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
180
A
Repetitive Peak Avalanche Power (1μs, 25°C)
Operating Junction Temperature
PARM
TJ
5000
-65~+150
W
°C
Storage Temperature
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS (Note 3)
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
73
13
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS(TA=25°C,unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
Reverse Breakdown Voltage (Note 1)
V(BR)R IR=1mA
Forward Voltage Drop
VFM
IF=15A, TJ=25°C
IF=15A, TJ=125°C
Leakage Current (Note 1)
IRM
VR=30V, TJ=25°C
VR=30V, TJ=125°C
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
3. Mounted on an FR4 PCB, single-sided copper, with 100 cm2 copper pad area.
MIN TYP MAX UNIT
30 V
0.54 V
0.49 V
100 500 μA
12 40 mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MGBR15L30 Даташит, Описание, Даташиты
MGBR15L30
Preliminary
DIODE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Номер в каталогеОписаниеПроизводители
MGBR15L30MOS GATED BARRIER RECTIFIERUnisonic Technologies
Unisonic Technologies

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