NCE0108AS PDF даташит
Спецификация NCE0108AS изготовлена «NCE Power Semiconductor» и имеет функцию, называемую «N-Channel Enhancement Mode Power MOSFET». |
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Детали детали
Номер произв | NCE0108AS |
Описание | N-Channel Enhancement Mode Power MOSFET |
Производители | NCE Power Semiconductor |
логотип |
7 Pages
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http://www.ncepower.com
Pb Free Product
NCE0108AS
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0108AS uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS = 100V,ID =8A
RDS(ON) < 28mΩ @ VGS=10V
(Typ:22mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
Schematic diagram
Application
● DC/DC Primary Side Switch
● Telecom/Server
● Synchronous Rectification
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0108AS
NCE0108AS
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
100
±20
8
5.6
57
2.6
-55 To 150
Unit
V
V
A
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
48 ℃/W
Wuxi NCE Power Semiconductor Co., Ltd
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NCE0108AS
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=100V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=8A
VDS=5V,ID=8A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=50V,ID=10A,RL=5Ω,
RG=1Ω,VGS=10V
ID=10A,VDD=50V,VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=8A
IS
trr TJ = 25°C, IF = 8A
Qrr di/dt = 100A/μs(Note3)
Min Typ
100 110
--
--
1.3 1.8
- 22
20 -
- 2000
- 300
- 250
- 12
- 10
- 19
-8
- 42
-9
- 10
- 0.85
--
- 30
- 44
Max
-
1
±100
2.5
28
-
-
-
-
-
-
-
-
-
-
-
1.2
8
Unit
V
μA
nA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
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Test Circuit
1)EAS test Circuit
Pb Free Product
NCE0108AS
2)Gate charge test Circuit
3)Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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Номер в каталоге | Описание | Производители |
NCE0108AS | N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
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