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BXL4001 PDF даташит

Спецификация BXL4001 изготовлена ​​​​«Sanyo» и имеет функцию, называемую «N-Channel Silicon MOSFET».

Детали детали

Номер произв BXL4001
Описание N-Channel Silicon MOSFET
Производители Sanyo
логотип Sanyo логотип 

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BXL4001 Даташит, Описание, Даташиты
Ordering number : ENA1459
BXL4001
SANYO Semiconductors
DATA SHEET
BXL4001
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Motor drive.
Avalanche resistance guarantee.
10V drive.
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=30V, L=100μH, IAV=51A
*2 L100μH, Single pulse
Tch
Tstg
EAS
IAV
Electrical Characteristics at Ta=25°C
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
75
±20
85
340
1.75
75
150
--55 to +150
211
51
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Marking : XL4001
Symbol
V(BR)DSS
IDSS
IGSS
Conditions
ID=1mA, VGS=0V
VDS=75V, VGS=0V
VGS=±16V, VDS=0V
min
75
Ratings
typ
max
1
±10
Unit
V
μA
μA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
42209QA MS IM TC-00001940 No. A1459-1/5









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BXL4001 Даташит, Описание, Даташиты
BXL4001
Continued from preceding page.
Parameter
Symbol
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, ID=1mA
VDS=10V, ID=43A
ID=43A, VGS=10V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=30V, VGS=10V, ID=85A
VDS=30V, VGS=10V, ID=85A
VDS=30V, VGS=10V, ID=85A
IS=85A, VGS=0V
Package Dimensions
unit : mm (typ)
7530-001
10.2 3.6
4.5
1.3
min
2
Ratings
typ
75
9.0
6700
590
440
75
340
260
170
115
37
30
1.0
max
4
12.4
1.5
Unit
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
1.2
0.8
123
2.55 2.55
2.55 2.55
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220(LS)
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=30V
ID=43A
RL=0.7Ω
D VOUT
BXL4001
P.G 50Ω S
Avalanche Resistance Test Circuit
50Ω
L
10V
0V
50Ω
BXL4001
VDD
No. A1459-2/5









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BXL4001 Даташит, Описание, Даташиты
BXL4001
170
160 Tc=25°C
ID -- VDS
150 8V 7V
140
130
120
110
100
6V
90
80
70
60
50
40 VGS=5V
30
20
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0
30 Drain-Rto-DSSou(rocenV) ol-t-ageV, GVDSS -- V IT14625
28
ID=43A
Single pulse
26
24
22
20
18
16
14 Tc=75°C
12
10 25°C
8 --25°C
6
4
4
2
100
7
5
3
2
10
7
5
3
2
5 6 7 8 9 10
Gate-to-So|uyrcfesV|o-l-tagIeD, VGS -- V
IT14627
VDS=10V
25°C
Tc=
--25°C
75°C
1.0
7
5
3
0.1 2 3 5 7 1.0 2 3 5 7 10 2
1000
VDD=30V
7 VGS=10V
Drain Current,
SW Time
I-D-
-- A
ID
3
5
td(off)
3
5 7 100 2
IT14629
2
tf
100 tr
td(on)
7
5
3
0.1 2 3 5 7 1.0 2 3 5 7 10
2 3 5 7 100 2
Drain Current, ID -- A
IT14631
170
160 VDS=10V
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
01
25
ID -- VGS(off)
2345678
CutofRf VDolSta(goen, V) G-S-(oTffc) -- V
IT14626
Single pulse
20
15
10 V GS=10V, I D=43A
5
0
--50 --25
0
25 50 75 100 125 150
Case Temperature, Tc -- °C
32 VGS=0V
IS -- VSD
10057 Single pulse
32
1057
32
1.057
32
0.157
32
0.0157
3
2
0.001
0
0.2 0.4 0.6 0.8 1.0
IT14628
1.2 1.4
2
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-DV--DVS
IT14630
f=1MHz
10000
7
5
Ciss
3
2
1000
7
5
3
2
100
0
Coss
Crss
5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT14632
No. A1459-3/5










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