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PDF 2SK4177 Data sheet ( Hoja de datos )
| Número de pieza | 2SK4177 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Ordering number : ENA0869A
2SK4177
N-Channel Power MOSFET
1500V, 2A, 13Ω, TO-263-2L
http://onsemi.com
Features
• ON-resistance RDS(on)=10Ω(typ.)
• 10V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=50V, L=20mH, IAV=2A (Fig.1)
*2 L≤20mH, single pulse
• Input capacitance Ciss=380pF (typ.)
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
1500
±20
2
4
80
150
--55 to +150
41
2
Unit
V
V
A
A
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7535-001
10.0 4.5
1.3
4
2SK4177-DL-1E
8.0
Product & Package Information
• Package
: TO-263-2L
• JEITA, JEDEC
: SC-83, TO-263
• Minimum Packing Quantity : 800 pcs./reel
Packing Type: DL
Marking
K4177
1 23
2.54
1.27
0.8
2.54
0.254
5.3
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
DL
Electrical Connection
2, 4
1
LOT No.
TO-263-2L
3
Semiconductor Components Industries, LLC, 2013
July, 2013
D0512 TKIM TC-00002833/31208QB TIIM TC-00001270 No. A0869-1/7
1 page  
Taping Specification
2SK4177-DL-1E
2SK4177
No. A0869-5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SK4177.PDF ] | |
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