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2SK4087LS PDF даташит

Спецификация 2SK4087LS изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor».

Детали детали

Номер произв 2SK4087LS
Описание N-Channel Power MOSFET / Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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2SK4087LS Даташит, Описание, Даташиты
Ordering number : ENA0555E
2SK4087LS
N-Channel Power MOSFET
600V, 14A, 610mΩ, TO-220F-3FS
http://onsemi.com
Features
ON-resistance RDS(on)=0.47Ω (typ.)
10V drive
Input capacitance Ciss=1200pF (typ.)
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
600 V
Gate-to-Source Voltage
VGSS
±30 V
Drain Current (DC)
IDc *1
IDpack *2
Limited only by maximum temperature Tch=150°C
Tc=25°C (Our ideal heat dissipation condition)*3
14 A
9.2 A
Drain Current (Pulse)
IDP PW10μs, duty cycle1%
52 A
Allowable Power Dissipation
PD Tc=25°C (Our ideal heat dissipation condition)*3
2.0 W
40 W
Channel Temperature
Tch
150 °C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
106 mJ
Avalanche Current *5
IAV
14 A
*1 Shows chip capability.
*2 Package limited.
*3 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=1mH, IAV=14A (Fig.1)
*5 L1mH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
4.7
2.54
2SK4087LS-1E
Product & Package Information
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
1.47 MAX
0.8
123
2.54 2.54
2.76
0.5 1 : Gate
2 : Drain
3 : Source
TO-220F-3FS
K4087
LOT No.
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
41112 TKIM TC-00002744/O1007 TIIM TC-00000930/40407QB TIIM TC-00000630/22107QB TIIM TC-00000371 No. A0555-1/7
O1712 TKIM TC-00002824









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2SK4087LS Даташит, Описание, Даташиты
2SK4087LS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=10mA, VGS=0V
VDS=480V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=7A
ID=7A, VGS=10V
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=14A
IS=14A, VGS=0V
min
600
Ratings
typ
3
48
0.47
1200
220
50
27
72
144
48
46
8.6
26.4
0.95
max
100
±100
5
0.61
1.3
Unit
V
μA
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
VIN
10V
VDD=200V
50Ω
RG
L
0V
VIN
PW10μs
ID=7A
RL=28Ω
D VOUT
D.C.1%
2SK4087LS
10V
0V 50Ω
VDD
G
2SK4087LS
P.G 50Ω S
Ordering Information
Device
2SK4087LS-1E
Package
TO-220F-3FS
Shipping
50pcs./magazine
memo
Pb Free
35
Tc=25°C
30
25
ID -- VDS
10V
15V
8V
20
15
10
6V
5
VGS=5V
0
0 5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT11753
40
VDS=20V
35
ID -- VGS
Tc= --25°C
30
25°C
25
75°C
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS -- V IT11754
No. A0555-2/7









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2SK4087LS Даташит, Описание, Даташиты
2SK4087LS
2.0 RDS(on) -- VGS
ID=7A
1.8
1.6
1.4
1.2
1.0
0.8 Tc=75°C
0.6 25°C
0.4 --25°C
0.2
0
3 5 7 9 11 13 15
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
IT11755
3
2 VDS=10V
10
7
25°C
5
3
ÔTc=
--25°C
Ô75°C
2
1.0
7
5
3
0.1
1000
7
5
3
2
23
5 7 1.0
2 3 5 7 10
Drain
SW
Current,
Time
I-D-
-- A
ID
23 5
IT11757
VDD=200V
VGS=10V
td(off)
100
7 tr tf
5
3 Ôtd(on)
2
10
0.1
2 3 5 7 1.0
2 3 5 7 10
10
Drain Current,
VGS --
IQDg--
A
VDS=200V
9 ID=14A
8
23 5
IT11759
7
6
5
4
3
2
1
0
0 10 20 30 40 50
Total Gate Charge, Qg -- nC
IT11761
1.4 RDS(on) -- Tc
1.2
1.0
0.8
0.6
I D=7A, V GS=10V
0.4
0.2
0
--50
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
10000
7
5
3
2
1000
7
5
3
2
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IS -- VSD
IT11756
VGS=0V
0.4 0.6 0.8 1.0 1.2 1.4
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-DV--DVS
IT11758
f=1MHz
ÔCiss
CossÔ
100
7 CÔrss
5
3
2
10
0 5 10 15 20 25 30 35 40 45 50
Drain-to-Source
A
Voltage,
SO
VDS
--
V
100
7
5
IDP=52A(PW10μs)
3
2 IDc(*1)=14A
10
7
5
3
2 IDpack(*2)=9.2A
1.0
7
Operation in this area
5
3
is limited by RDS(on).
10μs
100μs
DC op1e0ra01tmi0osmns1ms
2
IT11760
0.1
7
5
3
2 Tc=25°C
0.01 Single pulse
*1. Shows chip capability
*2. Our ideal heat dissipation condition
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 71000
Drain-to-Source Voltage, VDS -- V IT16815
No. A0555-3/7










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