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7N60K-MTQ PDF даташит

Спецификация 7N60K-MTQ изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 7N60K-MTQ
Описание N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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7N60K-MTQ Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
7N60K-MTQ
Preliminary
6.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 7N60K-MTQ is a high voltage power MOSFET and
is designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in switching power
supplies and adaptors.
FEATURES
* RDS(ON) < 1.4@ VGS = 10V, ID = 3.5A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N60KL-TA3-T
7N60KG-TA3-T
7N60KL-TF3-T
7N60KG-TF3-T
7N60KL-TF1-T
7N60KG-TF1-T
7N60KL-TF2-T
7N60KG-TF2-T
7N60KL-TN3-R
7N60KG-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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7N60K-MTQ Даташит, Описание, Даташиты
7N60K-MTQ
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 600 V
Gate-Source Voltage
Avalanche Current (Note 2)
VGSS ±30 V
IAR 7 A
Continuous Drain Current
Pulsed Drain Current (Note 2)
ID 7 A
IDM 24.8 A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
EAR
340 mJ
13 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.8 ns
TO-220
142 W
Power Dissipation
TO-220F/TO-220F1
TO-220F2
PD
48 W
TO-252
59 W
Junction Temperature
Operating Temperature
TJ
TOPR
+150
-55 ~ +150
°C
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 18.33mH, IAS = 7A, VDD = 90V, RG = 25 , Starting TJ = 25°C
4. ISD 7A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
Junction to Ambient
TO-220F1/TO-220F2
TO-252
TO-220
Junction to Case
TO-220F/TO-220F1
TO-220F2
TO-252
SYMBOL
θJA
θJC
RATING
62.5
110
0.88
2.6
2.1
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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7N60K-MTQ Даташит, Описание, Даташиты
7N60K-MTQ
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-
Source
Leakage Current
Forward
Reverse
Breakdown Voltage Temperature
Coefficient
BVDSS
IDSS
IGSS
VGS=0V, ID=250μA
VDS=600V, VGS=0V
VDS=480V, VGS=0V, TJ =125°C
VG=30V, VDS=0V
VGS=-30V, VDS=0V
600
BVDSS/TJ ID=250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=3.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V, VGS=0V, f=1.0 MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD=30V, ID =0.5A, RG =25
(Note 1, 2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS=50V, ID=1.3A, VGS=10V
IG=100μA (Note 1, 2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS=0V, IS=7A
Maximum Continuous Drain-Source Diode
Forward Current
IS
2.0
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Body Diode Reverse Recovery Time
tRR ISD=7A, dIS/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width 300μs, Duty cycle 2%.
2. Essentially independent of operating temperature.
TYP
0.53
540
97
11
60
66
120
64
23
6.7
5.7
368
3.5
MAX UNIT
10
10
100
-100
V
μA
μA
nA
nA
V/°C
4.0 V
1.4
pF
pF
pF
ns
ns
ns
ns
28 nC
nC
nC
1.4 V
7A
28 A
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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