5N40K-MT PDF даташит
Спецификация 5N40K-MT изготовлена «Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET». |
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Детали детали
Номер произв | 5N40K-MT |
Описание | N-CHANNEL POWER MOSFET |
Производители | Unisonic Technologies |
логотип |
7 Pages
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UNISONIC TECHNOLOGIES CO., LTD
5N40K-MT
5A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 5N40K-MT is an N-channel mode power MOSFET
using UTC’ s advanced technology to provide customers with
planar stripe and DMOS technology. This technology specializes in
allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the
avalanche and commutation mode.
The UTC 5N40K-MT is universally applied in electronic lamp
ballast based on half bridge topology and high efficient switched
mode power supply.
FEATURES
* RDS(ON) <1.2Ω @ VGS=10V, ID=2.5A
* High switching speed
* 100% avalanche tested
SYMBOL
Power MOSFET
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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5N40K-MT
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N40KL-TA3-T
5N40KG-TA3-T
5N40KL-TF3-T
5N40KG-TF3-T
5N40KL-TF1-T
5N40KG-TF1-T
5N40KL-TF2-T
5N40KG-TF2-T
5N40KL-TF3-T
5N40KG-TF3-T
5N40KL-TM3-T
5N40KG-TM3-T
5N40KL-TMS-T
5N40KG-TMS-T
5N40KL-TMS2-T
5N40KG-TMS2-T
5N40KL-TMS4-T
5N40KG-TMS4-T
5N40KL-TN3-R
5N40KG-TN3-R
5N40KL-TND-R
5N40KG-TND-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Power MOSFET
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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5N40K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 400 V
VGSS ±30 V
Drain Current
Continuous (TC=25°C)
Pulsed (Note 2)
ID
IDM
5A
20 A
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
210 mJ
4.5 V/ns
TO-220
69 W
TO-220F/TO-220F1
TO-220F3
38 W
Power Dissipation
TO-220F2
PD
39 W
TO-251/TO-251S
TO-251S2/TO-251S4
58 W
TO-252/TO-252D
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55~+150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 16.8mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-220F3
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
SYMBOL
θJA
θJC
RATINGS
62.5
110
1.8
3.25
3.15
2.13
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Номер в каталоге | Описание | Производители |
5N40K-MT | N-CHANNEL POWER MOSFET | Unisonic Technologies |
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