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11N50K-MT PDF даташит

Спецификация 11N50K-MT изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 11N50K-MT
Описание N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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11N50K-MT Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
11N50K-MT
Preliminary
11A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 11N50K-MT is an N-channel enhancement mode
power MOSFET. It uses UTC advanced planar stripe, DMOS
technology to provide customers perfect switching performance,
minimal on-state resistance. It also can withstand high energy pulse
in the avalanche and commutation mode.
The UTC 11N50K-MT is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
FEATURES
* RDS(ON) < 0.55@ VGS = 10 V, ID = 5.5 A
* Fast Switching
* With 100% Avalanche Tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11N50KL-TF2-T
11N50KG-TF2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F2
Pin Assignment
123
GD S
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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11N50K-MT Даташит, Описание, Даташиты
11N50K-MT
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
TC=25°C
TC=100°C
Pulsed Drain Current (Note 3)
Single Pulsed Avalanche Energy(Note 4)
Peak Diode Recovery dv/dt (Note 5)
VDSS
VGSS
ID
IDM
EAS
dv/dt
500
±30
11 (Note 2)
7 (Note 2)
44 (Note 2)
500
4.5
V
V
A
A
A
mJ
V/ns
Power Dissipation
Derate above 25°C
PD
48 W
0.38 W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating : Pulse width limited by maximum junction temperature
4. L=8.26mH, IAS=11A, VDD= 50V, RG=25, Starting TJ=25°C
5. ISD 11A, di/dt 200A/μs, VDD BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
Junction to Ambient
Junction to Case
θJA 62.5
θJC 2.6
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250μA,Referenced to 25°C
Drain-Source Leakage Current
IDSS
VDS=500V, VGS=0V
VDS=500V, TJ=125°C
Gate-Source Leakage Current
IGSS VDS=0V ,VGS=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS= VGS, ID=250µA
VGS=10V, ID=5.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS=50V, VGS=10V, ID=1.3A
(Note 1, 2)
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
tD(ON)
tR
tD(OFF)
tF
VDD=30V, ID=0.5A, RG=25
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
ISM
VSD IS =11A, VGS=0V
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%.
2. Essentially independent of operating temperature.
500 V
0.5 V/°C
10 µA
100 µA
±100 nA
2.0 4.0 V
0.43 0.55
850 1500
150 200
9 20
pF
pF
pF
33 45
9
9
65 80
100 150
160 250
100 160
nC
nC
nC
ns
ns
ns
ns
11 A
44 A
1.4 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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11N50K-MT Даташит, Описание, Даташиты
11N50K-MT
Preliminary
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Номер в каталогеОписаниеПроизводители
11N50K-MTN-CHANNEL POWER MOSFETUnisonic Technologies
Unisonic Technologies

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