740 PDF даташит
Спецификация 740 изготовлена «GFD» и имеет функцию, называемую «400V N-Channel MOSFET». |
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Детали детали
Номер произв | 740 |
Описание | 400V N-Channel MOSFET |
Производители | GFD |
логотип |
9 Pages
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400V N-Channel MOSFET
GENERAL DESCRIPTION
This Power MOSFET is produced using
advanced planar stripe DMOS technology.
This advanced technology has been especially
tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche
and commutation mode. These devices are
well suited for high efficiency switched mode
power supplies, active power factor correction
based on half bridge topology.
740
VDSS RDS(ON)
ID
400V 0.55Ω
10.5A
Features
• 10.5A, 400V, RDS(on) = 0.55Ω @VGS = 10 V
• Low gate charge ( typical 30nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Ordering Information
PART NUMBER PACKAGE BRAND
740
TO-220
0GFD
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740
Absolute Maximum Ratings
TC = 25°Cunless otherwise noted
Symbol
Parameter
740
740F
VDSS
ID
Drain-Source Voltage
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
400
10.5
6.6
10.5
6.6
IDM Drain Current- Pulsed
(Note 1)
42
42
VGSS
Gate-Source Voltage
± 30
EAS
Single Pulsed Avalanche Energy
(Note 2)
378
Units
V
A
A
A
V
mJ
EAR Repetitive Avalanche Energy
(Note 1)
13.9
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
TJ, TSTG
TL
Power Dissipation (TC = 25°C)
Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes,
1/8" from case for 5 seconds
139
1.11
45.5
0.36
-55 to +150
300
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
SLP740C SLF740C
Units
RθJC
Thermal Resistance, Junction-to-Case
0.90
2.75
°C/W
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5 -- °C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
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Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
740
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA
400 --
--
V
∆BVDSS/ Breakdown Voltage Temperature
∆TJ Coefficient
ID = 250 µA, Referenced to
25°C
-- 0.6
--
VDS = 400 V, VGS = 0 V
-- --
1
IDSS Zero Gate Voltage Drain Current
VDS = 320 V, TC = 125°C -- -- 10
V/°C
µA
µA
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
-- -- 100
nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
-- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
VDS = VGS, ID= 250 µA
2.0 -- 4.0
V
VGS = 10 V, ID = 5.25 A
-- 0.43 0.55 Ω
Dynamic Characteristics
Ciss Input Capacitance
-- 870 --
pF
Coss Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Crss Reverse Transfer Capacitance
-- 250 --
pF
-- 85 --
pF
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Номер в каталоге | Описание | Производители |
740 | 400V N-Channel MOSFET | GFD |
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