1N1124A PDF даташит
Спецификация 1N1124A изготовлена «GeneSiC» и имеет функцию, называемую «Silicon Standard Recovery Diode». |
|
Детали детали
Номер произв | 1N1124A |
Описание | Silicon Standard Recovery Diode |
Производители | GeneSiC |
логотип |
3 Pages
No Preview Available ! |
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 50 V to 600 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N1199A thru 1N1206AR
VRRM = 50 V - 600 V
IF = 12 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
VRRM
VRMS
VDC
IF
TC ≤ 150 °C
50 100 200
35 70 140
50 100 200
12 12 12
Surge non-repetitive forward
current, Half Sine Wave
IF,SM TC = 25 °C, tp = 8.3 ms
240
240
240
400 600 V
280 420 V
400 600 V
12 12 A
240 240 A
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction -
case
VF
IR
RthJC
IF = 12 A, Tj = 25 °C
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 175 °C
1.1
10
15
2.00
1.1
10
15
2.00
1.1
10
15
2.00
1.1 1.1 V
10 10 μA
15 15 mA
2.00 2.00 °C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1
No Preview Available ! |
1N1199A thru 1N1206AR
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
2
No Preview Available ! |
1N1199A thru 1N1206AR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
M DO- 4 (DO-203AA)
J
P
D
G
B
N
E
F
C
A
Inches
Millimeters
Min
A
B 0.424
C -----
D ------
E 0.453
F 0.114
G -----
J -----
M -----
N 0.031
P 0.070
Max Min
10-32 UNF
0.437
10.77
0.505
-----
0.800
-----
0.492
11.50
0.140
2.90
0.405
-----
0.216
-----
φ0.302
-----
0.045
0.80
0.79 1.80
Max
11.10
12.82
20.30
12.50
3.50
10.29
5.50
φ7.68
1.15
2.00
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
3
Скачать PDF:
[ 1N1124A.PDF Даташит ]
Номер в каталоге | Описание | Производители |
1N1124 | Silicon Power Rectifier | Microsemi Corporation |
1N1124A | Silicon Power Rectifier | Microsemi Corporation |
1N1124A | (1N1124A - 1N1128A) STANDARD RECOVERY RECTIFIER | SSDI |
1N1124A | Silicon Standard Recovery Diode | GeneSiC |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |