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WFB44N25 PDF даташит

Спецификация WFB44N25 изготовлена ​​​​«Wisdom technologies» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв WFB44N25
Описание N-Channel MOSFET
Производители Wisdom technologies
логотип Wisdom technologies логотип 

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WFB44N25 Даташит, Описание, Даташиты
PROVISIONAL
Wisdom Semiconductor
WFB44N25
N-Channel MOSFET
Features
RDS(on) (Max 0.069 )@VGS=10V
Gate Charge (Typical 47nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
Symbol
1. Gate{
{ 2. Drain
◀▲
{ 3. Source
Absolute Maximum Ratings (* Drain current limited by junction temperature)
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
250
44*
26.4*
170*
±30
2050
30.7
4.5
307
2.45
- 55 ~ 150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
-
-
Value
Typ.
-
-
Max.
0.41
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W









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WFB44N25 Даташит, Описание, Даташиты
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
250 --
ΔBVDSS Breakdown Voltage Temperature
/ ΔTJ Coefficient
ID = 250 μA, Referenced to 25°C -- 0.25
IDSS Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
-- --
-- --
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
-- --
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
--
--
10
100
100
-100
V
V/°C
μA
μA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 22 A
(Note 4)
2.0 --
4.0
-- 0.058 0.069
V
Ω
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2300
-- 450
-- 60
--
--
--
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 125V, ID = 44 A,
RG = 25 Ω
VDS = 200 V, ID = 44A,
VGS = 10 V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
60
400
90
120
50
20
30
--
--
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 44 A
trr Reverse Recovery Time
VGS = 0 V, IS = 44 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/μs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. Pulse Test : Pulse width 300μs, Duty cycle 2%
3. Essentially independent of operating temperature
-- -- 44
-- -- 180
-- -- 1.4
-- 200
--
(Note 4)
--
1.8
--
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
μC










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Номер в каталогеОписаниеПроизводители
WFB44N25N-Channel MOSFETWisdom technologies
Wisdom technologies

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