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WFN1N70 PDF даташит

Спецификация WFN1N70 изготовлена ​​​​«Wisdom technologies» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв WFN1N70
Описание N-Channel MOSFET
Производители Wisdom technologies
логотип Wisdom technologies логотип 

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WFN1N70 Даташит, Описание, Даташиты
PRELIMILARY
Wisdom Semiconductor
WFN1N70
N-Channel MOSFET
Features
RDS(on) (Max 14.0 )@VGS=10V
Gate Charge (Typical 5.0nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Symbol
1. Gate{
{ 2. Drain
◀▲
{ 3. Source
TO-92
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJL
RθJA
Parameter
Thermal Resistance, Junction-to-Read
Thermal Resistance, Junction-to-Ambient
Min.
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
700
0.3
0.18
1.2
±30
54
0.25
5.5
2.5
0.02
- 55 ~ 150
300
Value
Typ.
-
-
Max.
50
140
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.









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WFN1N70 Даташит, Описание, Даташиты
WFN1N70
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 700V, VGS = 0V
VDS = 560V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250uA
VGS =10 V, ID = 0.15A
VGS =0 V, VDS =25V, f = 1MHz
VDD =350V, ID =0.8A, RG =25
(Note 4, 5)
VDS =560V, VGS =10V, ID =0.8A
(Note 4, 5)
Min
700
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
-
0.65
-
-
-
-
-
-
10
100
100
-100
V
V/°C
uA
uA
nA
nA
- 4.0
11.5 14.0
V
160 200
20 26
3.0 4.0
pF
15 40
25 60
20 50
30 70
5.0 6.0
1.0 -
2.0 -
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS =0.3A, VGS =0V
IS=0.8A, VGS=0V, dIF/dt=100A/us
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 100mH, IAS =0.8A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 0.8A, di/dt 300A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
200
0.6
Max.
0.3
1.2
1.5
-
-
Unit.
A
V
ns
uC
Copyright@Wisdom Semiconductor Inc., All rights reserved.









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WFN1N70 Даташит, Описание, Даташиты
Typical Characteristics
Top : 15V.0GSV
10.0 V
100
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom: 5.0 V
10-1
10-2
10-1
Notes :
1. 250µs Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
60
50
Figure 1. On-Region CVGSh=a10rVacteristics
40
VGS = 20V
30
20
10
Note : TJ = 25
0
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
300
200
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
100
0
10-1
Coss
Crss
Notes :
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
100
150oC
10-1
2
25oC
-55oC
Notes :
1.
2.
V25DS0µ=s40PVulse
Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
100
10-1
0.2
150
25
Notes :
1.
2.
V25GS0µ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
12
VDS = 120V
10 VDS = 300V
8 VDS = 480V
6
4
2
Note : ID = 0.8 A
0
0123456
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics










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WFN1N70N-Channel MOSFETWisdom technologies
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