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PMBD6050 PDF даташит

Спецификация PMBD6050 изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «High-speed diode».

Детали детали

Номер произв PMBD6050
Описание High-speed diode
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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PMBD6050 Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PMBD6050
High-speed diode
Product data sheet
Supersedes data of 1999 May 11
2004 Jan 14









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PMBD6050 Даташит, Описание, Даташиты
NXP Semiconductors
High-speed diode
Product data sheet
PMBD6050
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage: max. 70 V
Repetitive peak reverse voltage: max. 85 V
Repetitive peak forward current: max. 500 mA.
PINNING
PIN
1
2
3
DESCRIPTION
anode
not connected
cathode
APPLICATIONS
High-speed switching in thick and thin-film circuits.
DESCRIPTION
The PMBD6050 is a high-speed switching diode fabricated
in planar technology, and encapsulated in a small SOT23
plastic SMD package.
MARKING
TYPE NUMBER
PMBD6050
MARKING CODE(1)
*5A
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
handbook, halfpa2ge
1
2
n.c.
3
1
3
MAM185
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PMBD6050
NAME
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2004 Jan 14
2









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PMBD6050 Даташит, Описание, Даташиты
NXP Semiconductors
High-speed diode
Product data sheet
PMBD6050
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VRRM
VR
IF
IFRM
IFSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward
current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
CONDITIONS
note 1; see Fig.2
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN.
MAX.
85
70
215
500
UNIT
V
V
mA
mA
4A
1A
0.5 A
250 mW
65 +150 °C
150 °C
2004 Jan 14
3










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Номер в каталогеОписаниеПроизводители
PMBD6050High-speed diodePhilips
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PMBD6050High-speed diodeNXP Semiconductors
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