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PMBD353 PDF даташит

Спецификация PMBD353 изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «Schottky barrier double diode».

Детали детали

Номер произв PMBD353
Описание Schottky barrier double diode
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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PMBD353 Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBD353
Schottky barrier double diode
Product data sheet
Supersedes data of 1999 May 25
2001 Oct 15









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PMBD353 Даташит, Описание, Даташиты
NXP Semiconductors
Schottky barrier double diode
Product data sheet
PMBD353
FEATURES
Low forward voltage
Small SMD package
Low capacitance.
APPLICATIONS
UHF mixer
Sampling circuits
Modulators
Phase detection.
DESCRIPTION
Planar Schottky barrier double diode
in a SOT23 small plastic SMD
package.
MARKING
TYPE NUMBER
PMBD353
MARKING
CODE(1)
4F
Note
1. = p: Made in Hong Kong.
= t: Made in Malaysia.
= W: Made in China.
PINNING
PIN DESCRIPTION
1 cathode k1
2 anode a2
3 common connection a1, k2
handbook, 2 columns
3
handbook, 2 columns
3
12
12
MGC487
Top view
MGC421
Fig.1 Simplified outline (SOT23) pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
Per diode
VR
IF
Tstg
Tj
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
MIN.
MAX.
UNIT
4V
30 mA
65
+150
°C
100 °C
2001 Oct 15
2









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PMBD353 Даташит, Описание, Даташиты
NXP Semiconductors
Schottky barrier double diode
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF forward voltage
IR reverse current
Cd diode capacitance
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
CONDITIONS
see Fig.2
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
VR = 3 V; note 1; see Fig.3
f = 1 MHz; VR = 0; see Fig.4
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT23 standard mounting conditions.
CONDITIONS
Product data sheet
PMBD353
MAX.
UNIT
350
450
600
0.25
1
mV
mV
mV
μA
pF
VALUE
500
UNIT
K/W
2001 Oct 15
3










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