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HSMS-286B PDF даташит

Спецификация HSMS-286B изготовлена ​​​​«AVAGO» и имеет функцию, называемую «Surface Mount Microwave Schottky Detector Diodes».

Детали детали

Номер произв HSMS-286B
Описание Surface Mount Microwave Schottky Detector Diodes
Производители AVAGO
логотип AVAGO логотип 

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HSMS-286B Даташит, Описание, Даташиты
HSMS-286x Series
Surface Mount Microwave Schottky Detector Diodes
Data Sheet
Description
Avago’s HSMS‑286x family of DC biased detector diodes
have been designed and optim­ized for use from 915 MHz
to 5.8 GHz.They are ideal for RF/ID and RFTag applications
as well as large signal detection, modulation, RF to DC
conversion or voltage doubling.
Available in various package ­conf­igurations, this family
of detector diodes provides low cost solutions to a wide
variety of design problems. Avago’s manufacturing
techniques assure that when two or more diodes are
mounted into a single surface mount package, they
are taken from adjacent sites on the wafer, assuring the
highest possible degree of match.
Pin Connections and Package Marking
16
25
34
Notes:
1. Package marking provides orientation and identification.
2. The first two characters are the package marking code.
The third character is the date code.
SOT-23/SOT-143 Package Lead Code Identification
(top view)
SINGLE
3
SERIES
3
12
#0
COMMON
ANODE
3
12
#2
COMMON
CATHODE
3
1 #3 2
1 #4 2
UNCONNECTED
PAIR
34
Features
Surface Mount SOT-23/SOT‑143 Packages
Miniature SOT-323 and SOT‑363 Packages
High Detection Sensitivity:
  up to 50 mV/µW at 915 MHz
  up to 35 mV/µW at 2.45 GHz
  up to 25 mV/µW at 5.80 GHz
Low FIT (Failure in Time) Rate*
Tape and Reel Options Available
Unique Configurations in Surface Mount SOT-363
Package
– increase flexibility
– save board space
– reduce cost
HSMS-286K Grounded Center Leads Provide up to
10 dB Higher Isolation
Matched Diodes for Consistent Performance
Better Thermal Conductivity for Higher Power
Dissipation
Lead-free
* For more information see the Surface Mount Schottky Reliability
Data Sheet.
SOT-323 Package Lead Code Identification (top view)
SINGLE
3
SERIES
3
1 B2
COMMON
ANODE
3
1 C2
COMMON
CATHODE
3
1E2
1 F2
SOT-363 Package Lead Code Identification (top view)
HIGH ISOLATION UNCONNECTED
UNCONNECTED PAIR
TRIO
654
654
1 #5 2
123
K
BRIDGE
QUAD
654
1 2L 3
RING
QUAD
654
1 2P 3
1 2R 3









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HSMS-286B Даташит, Описание, Даташиты
SOT-23/SOT-143 DC Electrical Specifications, TC = +25°C, Single Diode
Part
Number
HSMS-
Package
Marking
Lead
Forward Voltage
Code Code
Configuration
VF (mV)
2860 T0 0 Single
250 Min. 350 Max.
2862 T2 2 Series Pair [1,2]
2863 T3 3 Common Anode[1,2]
2864 T4 4 Common Cathode[1,2]
2865 T5 5 Unconnected Pair [1,2]
Test Conditions
IF = 1.0 mA
Notes:
1. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.
2. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5V.
Typical  
Capacitance
CT (pF)
0.30
VR = 0 V, f = 1 MHz
SOT-323/SOT-363 DC Electrical Specifications, TC = +25°C, Single Diode
Part
Number
HSMS-
Package
Marking
Lead
Forward Voltage
Code Code
Configuration
VF (mV)
286B T0 B Single
250 Min. 350 Max.
286C T2 C Series Pair [1,2]
286E T3 E Common Anode[1,2]
286F T4 F Common Cathode[1,2]
286K TK K High Isolation
Unconnected Pair
286L TL L Unconnected Trio
286P TP P Bridge Quad
286R ZZ R Ring Quad
Test Conditions
IF = 1.0 mA
Notes:
1. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.
2. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5V.
Typical  
Capacitance
CT (pF)
0.25
VR = 0 V, f = 1 MHz
2









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HSMS-286B Даташит, Описание, Даташиты
RF Electrical Specifications, TC = +25°C, Single Diode
Part
Typical Tangential Sensitivity
Typical Voltage Sensitivity g
Number TSS (dBm) @ f =
(mV/µW) @ f =
HSMS-
915 MHz 2.45 GHz
5.8 GHz
915 MHz
2.45 GHz
5.8 GHz
2860
– 57 –56
–55
50
35
25
2862
2863
2864
2865
286B
286C
286E
286F
286K
286L
286P
286R
Test Video Bandwidth = 2 MHz Power in = –40 dBm
Conditions
Ib = 5 µA RL = 100 KΩ, Ib = 5 µA
Typical Video
Resistance
RV (KΩ)
5.0
Ib = 5 µA
Absolute Maximum Ratings, TC = +25°C, Single Diode
Symbol   Parameter
Unit Absolute Maximum[1]
SOT-23/143 SOT-323/363
PIV
TJ
TSTG
TOP
θjc
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Operating Temperature
Thermal Resistance[2]
V 4.0
4.0
°C 150
150
°C -65 to 150 -65 to 150
°C -65 to 150 -65 to 150
°C/W
500
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the
device.
2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is
made to the circuit board.
Attention:
Observe precautions for
handling electrostatic
­sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R: Electro-
static Discharge Damage and Control.
3










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