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HSMS-2822 PDF даташит

Спецификация HSMS-2822 изготовлена ​​​​«AVAGO» и имеет функцию, называемую «Surface Mount RF Schottky Barrier Diodes».

Детали детали

Номер произв HSMS-2822
Описание Surface Mount RF Schottky Barrier Diodes
Производители AVAGO
логотип AVAGO логотип 

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HSMS-2822 Даташит, Описание, Даташиты
HSMS-282x
Surface Mount RF Schottky ­Barrier Diodes
Data Sheet
Description/Applications
These Schottky diodes are specifically designed for both
analog and digital applications. This series offers a wide
range of specifica­tions and package con­figura­tions to
give the d­ esigner wide flexib­ ility. Typical applications of
these Schottky diodes are mixing, detecting, switching,
sampling, clamping, and wave shaping. The HSMS‑282x
series of diodes is the best all-around choice for most
applications, featuring low series resistance, low forward
voltage at all current levels and good RF characteristics.
Note that Avago’s manufacturing techniques assure that
dice found in pairs and quads are taken from adjacent
sites on the wafer, assuring the highest degree of match.
Package Lead Code Identification,
SOT-23/SOT-143 (Top View)
SINGLE
3
SERIES
3
COMMON
ANODE
3
COMMON
CATHODE
3
Features
Low Turn-On Voltage (As Low as 0.34 V at 1 mA)
Low FIT (Failure in Time) Rate*
Six-sigma Quality Level
Single, Dual and Quad Versions
Unique Configurations in Surface Mount SOT-363 Package
– increase flexibility
– save board space
– reduce cost
HSMS-282K Grounded Center Leads Provide up to 10
dB Higher Isolation
Matched Diodes for Consistent Performance
Better Thermal Conductivity for Higher Power Dissipation
Lead-free Option Available
* For more information see the Surface Mount Schottky Reliability
Data Sheet.
Package Lead Code Identification, SOT-363
(Top View)
HIGH ISOLATION
UNCONNECTED PAIR
654
UNCONNECTED
TRIO
654
1 #0 2
UNCONNECTED
PAIR
34
1 #2 2
RING
QUAD
34
1 #3 2
BRIDGE
QUAD
34
1 #4 2
CROSS-OVER
QUAD
34
123
K
COMMON
CATHODE QUAD
654
123
L
COMMON
ANODE QUAD
654
1 #5 2
1 #7 2
1 #8 2
Package Lead Code Identification, SOT-323
(Top View)
SINGLE
SERIES
1 #9 2
B
COMMON
ANODE
C
COMMON
CATHODE
1 2M 3
BRIDGE
QUAD
654
1 2P 3
1 2N 3
RING
QUAD
654
1 2R 3
EF









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HSMS-2822 Даташит, Описание, Даташиты
Pin Connections and Package Marking
16
25
Notes:
3
4
1. Package marking provides orientation and identification.
2. See “Electrical Specifications” for appropriate package marking.
Absolute Maximum Ratings[1] TC = 25°C
Symbol Parameter
Unit SOT-23/SOT-143 SOT-323/SOT-363
If
Forward Current (1 µs Pulse)
Amp
1
1
PIV Peak Inverse Voltage
V
15 15
Tj Junction Temperature
°C
150 150
Tstg Storage Temperature
°C
-65 to 150
-65 to 150
θjc Thermal Resistance[2]
°C/W
500
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board.
Electrical Specifications TC = 25°C, Single Diode[3]
Part Package
Number Marking Lead
HSMS[4] Code
Code Configuration
2820 C0
0 Single
2822 C2
2 Series
2823 C3
3 Common Anode
2824 C4
4 Common Cathode
2825 C5
5 Unconnected Pair
2827 C7
7 Ring Quad[4]
2828 C8
8 Bridge Quad[4]
2829 C9
9 Cross-over Quad
282B C0
B Single
282C C2
C Series
282E C3
E Common Anode
282F C4
F Common Cathode
282K CK
K High Isolation
Unconnected Pair
282L CL
L Unconnected Trio
282M HH
M Common Cathode Quad
282N NN
N Common Anode Quad
282P CP
P Bridge Quad
282R OO
R Ring Quad
Test Conditions
Minimum
Breakdown
Voltage
VBR (V)
15
Maximum
Forward
Voltage
VF (mV)
340
IR = 100 mA IF = 1 mA[1]
Maximum
Forward
Voltage
VIFF
(V) @
(mA)
0.5  10
Maximum
Reverse
Leakage
IRV(Rn(AV)
@
)
100  1
Notes:
1.
2.
3.
∆∆EfVCfeFTOcfotfiorvrdediCoioaddreresiesirninLpifpaeaitriisrmsaeannd(τd)qqfuouaradadsllsintihs1e05s.2empdVFiommdeaaxsxiiimsm1uu0mm0.apts1mmaxAi.mum measured with Krakauer method at 5 mA.
4. See section titled “Quad Capacitance.”
5. RD = RS + 5.2Ω at 25°C and If = 5 mA.
Maximum
Capacitance
CT (pF)
1.0
Vf =R =1
0V[2]
MHz
2
Typical
Dynamic
Resistance
RD () [5]
12
IF = 5 mA









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HSMS-2822 Даташит, Описание, Даташиты
Quad Capacitance
Capacitance of Schottky diode quads is measured using
an HP4271 LCR meter. This instrument effectively isolates
individual diode branches from the others, allowing ac‑
curate capacitance measurement of each branch or each
diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz.
Avago defines this measurement as “CM”, and it is equiv‑
alent to the capaci­tance of the diode by itself. The equiv‑
alent diagonal and adja­cent capaci-tances can then be
calculated by the formulas given below.
In a quad, the diagonal capacit­ ance is the capacitance be‑
tween points A and B as shown in the figure below. The
diagonal capacitance is calculated using the following
formula
C DIAGONAL = _C_1_x__C_2_ + _C__3_x_C__4
C1 + C2 C3 + C4
TbtCaChenDAetcIwDAeJeGAeOqCiesNEunNAciTLvapal=co=leui_nCCCnl_at1t11_st+xe+_aAd_CdC__aj_u22a_n_–Csc1+_ide2n_n+_gC_CC_t_–t_1iC133_hnc–__+x3ae_+_tpC_Chf_ao–_Ce1_44cll4ifotiagwnuicnreeg
is the capacitance
below. This capaci‑
formula
C
ADJACENRT
j
==
C8.13+3I
X__1_0__-5_n_T1_____
b +I1s– + –1– + –1–
C2 C3 C4
Tohdiess.infoRrmj =at8io.3n3I
Xd1o0es-5nnoTt
b+Is
apply
to
cross-over
quad
di‑
C1
C
C2
A
C3
C4
B
Linear Equivalent Circuit Model Diode Chip
Rj
RS
Cj
RS = series resistance (see Table of SPICE parameters)
C j = junction capacitance (see Table of SPICE parameters)
Rj =
8.33 X 10-5 nT
Ib + Is
where
Ib = externally applied bias current in amps
Is = saturation current (see table of SPICE parameters)
T = temperature, K
n = ideality factor (see table of SPICE parameters)
Note:
To e ectively model the packaged HSMS-282x product,
please refer to Application Note AN1124.
ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.
SPICE Parameters
Parameter
Units
BV V
CJ0 pF
EG eV
IBV A
IS A
N
RS Ω
PB V
PT
M
HSMS-282x
15
0.7
0.69
1E - 4
2.2E-8
1.08
6.0
0.65
2
0.5
3










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