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HSMS-281K PDF даташит

Спецификация HSMS-281K изготовлена ​​​​«AVAGO» и имеет функцию, называемую «Surface Mount RF Schottky Barrier Diodes».

Детали детали

Номер произв HSMS-281K
Описание Surface Mount RF Schottky Barrier Diodes
Производители AVAGO
логотип AVAGO логотип 

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HSMS-281K Даташит, Описание, Даташиты
HSMS-281x
Surface Mount RF Schottky Barrier Diodes
Data Sheet
Description/Applications
These Schottky diodes are specifically designed for both
analog and digital applications. This series offers a wide
range of specifica­tions and package con­figura­tions to
give the ­designer wide flexi­bility. The HSMS‑281x series of
diodes features very low flicker (1/f ) noise.
Note that Avago’s manufacturing techniques assure that
dice found in pairs and quads are taken from adjacent
sites on the wafer, assuring the highest degree of match.
Features
Surface Mount Packages
Low Flicker Noise
Low FIT (Failure in Time) Rate*
Six-sigma Quality Level
Single, Dual and Quad Versions
Tape and Reel Options Available
Lead-free
For more information see the Surface Mount Schottky
Reliability Data Sheet.
Pin Connections and Package Marking
16
25
34
Notes:
1. Package marking provides orientation and identification.
2. See “Electrical Specifications” for appropriate package marking.
Package Lead Code Identification, SOT-323
(Top View)
SINGLE
SERIES
Package Lead Code Identification, SOT-23/SOT-143
(Top View)
SINGLE
3
SERIES
3
COMMON
ANODE
3
COMMON
CATHODE
3
1 #0 2
UNCONNECTED
PAIR
34
1 #2 2
RING
QUAD
34
12
#3
BRIDGE
QUAD
34
1 #4 2
1 #5 2
1 #7 2
1 #8 2
Package Lead Code Identification, SOT-363
(Top View)
HIGH ISOLATION
UNCONNECTED PAIR
654
UNCONNECTED
TRIO
654
B
COMMON
ANODE
C
COMMON
CATHODE
EF
123
K
COMMON
CATHODE QUAD
654
123
L
COMMON
ANODE QUAD
654
1 2M 3
BRIDGE
QUAD
654
1 2N 3
RING
QUAD
654
123
123









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HSMS-281K Даташит, Описание, Даташиты
Absolute Maximum Ratings[1] TC = 25°C
Symbol
Parameter
Unit
SOT-23/SOT-143
SOT-323/SOT-363
If
Forward Current (1 μs Pulse)
Amp
1
1
PIV Peak Inverse Voltage
V
Same as VBR
Same as VBR
Tj Junction Temperature
°C
150 150
Tstg Storage Temperature
°C
-65 to 150
-65 to 150
θjc Thermal Resistance[2]
°C/W
500
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board.
ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.
Electrical Specifications TC = 25°C, Single Diode[3]
Minimum Maximum
Part Package
Breakdown Forward
Number Marking Lead
Voltage Voltage
HSMS[4] Code Code Configuration
VBR (V) VF (mV)
Maximum
Forward
Voltage
VIFF
(V) @
(mA)
Maximum
Reverse
Leakage Maximum
IRV(RnA(V))@
Capacitance
CT (pF)
Typical
Dynamic
Resistance
RD (Ω)[5]
2810 B0 0 Single
20
410 1.0  35 200  15
1.2
2812 B2 2 Series
2813 B3 3 Common Anode
2814 B4 4 Common Cathode
2815 B5 5 Unconnected Pair
2817 B7 7 Ring Quad[4]
2818 B8 8 Bridge Quad[4]
281B B0 B Single
281C B2 C Series
281E B3 E Common Anode
281F B4 F Common Cathode
281K BK K High Isolation
Unconnected Pair
281L BL L Unconnected Trio
15
  Test Conditions
IR = 10 mA IF = 1 mA
Notes:
1. VF for diodes in pairs and quads in 15 mV maximum at 1 mA.
2. CTO for diodes in pairs and quads is 0.2 pF maximum.
3. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. See section titled “Quad Capacitance.”
5. RD = RS + 5.2 Ω at 25°C and If = 5 mA.
VF = 0 V IF = 5 mA
f = 1 MHz










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HSMS-281K Даташит, Описание, Даташиты
Quad Capacitance
Capacitance of Schottky diode quads is measured using
an HP4271 LCR meter. This instrument effectively isolates
individual diode branches from the others, allowing ac‑
curate capacitance measurement of each branch or each
diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz.
Avago defines this measurement as “CM”, and it is equiva‑
lent to the capaci­tance of the diode by itself. The equiva‑
lent diagonal and adja­cent capaci-tances can then be cal‑
culated by the formulas given below.
In a quad, the diagonal capaci­tance is the capacitance be‑
tween points A and B as shown in the figure below. The
diagonal capacitance is calculated using the following
formula
C DIAGONAL = _C_1_x__C_2_ + _C__3_x_C__4
C1 + C2 C3 + C4
TbtahenetcweeCeqieDAsunIDAciJGvaApOalCcoNEleuNiAnnTlLattst==eaAdd_CCCa_jua111n_scx++_iden_CnC_gC__t22_t_ihnc1+_–ae_tp+_hf_CaoC_e_–cl_1133_lifo_ti_x+ag_w+_Cn_Cu_icn_r1_44eegbifsoerltomhweu.lacTahpisacciatpanaccie‑
C
ADJACENT
R
j
=
=
C1+
8.33
I
___C_2___C1__3__C_ 4
bX+10–CI1s2-+5 n–1CT3+
–1–
C4
This information
odes.
Rj=
does not
8.33 X 10
I b+Is
a-5pnpTly
to
cross-over
quad
di‑
Linear Equivalent Circuit Model Diode Chip
Rj
RS
Cj
RS = series resistance (see Table of SPICE parameters)
C j = junction capacitance (see Table of SPICE parameters)
Rj =
8.33 X 10-5 nT
Ib + Is
where
Ib = externally applied bias current in amps
Is = saturation current (see table of SPICE parameters)
T = temperature, °K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-281x product,
please refer to Application Note AN1124.
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
SPICE Parameters
Parameter Units
BV
V
CJ0
pF
EG
eV
IBV
A
IS
A
N
RS
Ω
PB
V
PT
M
HSMS-281x
25
1.1
0.69
E-5
4.8E-9
1.08
10
0.65
2
0.5











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