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1T413 PDF даташит

Спецификация 1T413 изготовлена ​​​​«Sony Corporation» и имеет функцию, называемую «Variable Capacitance Diode».

Детали детали

Номер произв 1T413
Описание Variable Capacitance Diode
Производители Sony Corporation
логотип Sony Corporation логотип 

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1T413 Даташит, Описание, Даташиты
Variable Capacitance Diode
1T413
Description
The 1T413 is a variable capacitance diode
designed for the digital cellular phone VCO using a
super-small-miniature flat package (SSVC).
M-290
Features
Super-small-miniature flat package
Low series resistance: 0.40 Max. (f=470 MHz)
Large capacitance ratio: 2.90 Typ. (C1/C4)
Small leakage current: 10 nA Max. (VR=15 V)
Applications
Digital cellular phone VCO
Structure
Silicon epitaxial planar type diode
Absolute Maximum Ratings (Ta=25 °C)
Reverse voltage
VR 15
Operating temperature Topr –20 to +75
Storage temperature Tstg –65 to +150
V
°C
°C
Electrical Characteristics
Item
Reverse current
Diode capacitance
Capacitance ratio
Series resistance
Symbol
IR
C1
C4
C1/C4
rs
Conditions
VR=15 V
VR=1 V, f=1 MHz
VR=4 V, f=1 MHz
VR=1 V, f=470 MHz
(Ta=25 °C)
Min. Typ. Max. Unit
10.0 nA
15.0 17.5 pF
5.1 6.1 pF
2.5 2.9
0.40
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E99220-TE









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1T413 Даташит, Описание, Даташиты
Example of Representative Characteristics
Diode capacitance vs. Reverse voltage
100
Ta=25°C
50
20
10
5
2
1
0.1 0.2
0.5 1 2
VR-Reverse voltage (V)
5
10
1T413
Reverse current vs. Ambient temperature
VR=15V
10
1
0.1
–20
0 20 40 60
Ta-Ambient temperature (°C)
80
Forward voltage vs. Ambient temperature
0.90
IF=1mA
0.80
0.70
0.60
–20
0 20 40 60
Ta-Ambient temperature (°C)
80
Reverse voltage vs. Ambient temperature
35
IR=10µA
30
25
20
–20
0 20 40 60
Ta-Ambient temperature (°C)
80
—2—









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1T413 Даташит, Описание, Даташиты
1T413
1.03
Diode capacitance vs. Ambient temperature
VR=1V VR=2V
VR=3V
1.02
1.01
1.00
VR=4V
VR=10V
0.99
0.98
–20
0 20 40 60
Ta-Ambient temperature (°C)
80
2000
1000
500
Temperature coefficient of diode capacitance
200
100
50
30
0.1 0.2
0.5 1.0 2.0
5.0 10.0 20.0
VR-Reverse voltage (V)
Reverse current vs. Reverse voltage
100
Ta=80°C
10
Ta=60°C
1
0.1
1
Ta=25°C
3 10 30
VR-Reverse voltage (V)
Series resistance vs. Reverse voltage
0.5
f=470MHz
0.4
0.3
0.2
0.1
0.0
0.1
1
VR-Reverse voltage (V)
10
—3—










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Номер в каталогеОписаниеПроизводители
1T410Variable Capacitance DiodeSony Corporation
Sony Corporation
1T411Variable Capacitance DiodeSony Corporation
Sony Corporation
1T412Variable Capacitance DiodeSony Corporation
Sony Corporation
1T413Variable Capacitance DiodeSony Corporation
Sony Corporation

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