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PDF ATF-541M4 Data sheet ( Hoja de datos )
| Número de pieza | ATF-541M4 | |
| Descripción | Low Noise Enhancement Mode Pseudomorphic HEMT | |
| Fabricantes | AVAGO | |
| Logotipo |  |
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ATF-541M4
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Miniature Leadless Package
Data Sheet
Description
Avago Technologies’ ATF‑541M4 is a high linearity, low
noise, single supply E‑PHEMT housed in a miniature lead‑
less package.
The ATF-541M4’s small size and low profile makes it ideal
for the design of hybrid module and other space-con‑
straint devices.
The device can be used in applications such as TMA and
front end LNA for Cellular/PCS and WCDMA base stations,
LNA and driver amplifiers for Wireless Data and 802.11b
WLAN.
In addition, the device’s superior RF performance at higher
frequency makes it an ideal candidate for high frequency
applications such as WLL, 802.11a WLAN, 5–6 GHz UNII
and HIPERLAN applications.
MiniPak 1.4 mm x 1.2 mm Package
Rx
Pin Connections and Package Marking
Source
Pin 3
Gate
Pin 2
Rx
Drain
Pin 4
Source
Pin 1
Features
• High linearity performance
• Single Supply Enhancement Mode Technology[1]
• Very low noise figure
• Excellent uniformity in product specifications
• 800 micron gate width
• Miniature leadless package
1.4 mm x 1.2 mm x 0.7 mm
• Tape-and-Reel packaging option available
Specifications
2 GHz; 3V, 60 mA (Typ.)
• 35.8 dBm output 3rd order intercept
• 21.4 dBm output power at 1 dB gain compression
• 0.5 dB noise figure
• 17.5 dB associated gain
Applications
• Low Noise Amplifier and Driver Amplifier for Cellular/
PCS and WCDMA Base Stations
• LNA and Driver Amplifier for WLAN, WLL/RLL and
MMDS applications
• General purpose discrete E-PHEMT for ultra low noise
applications in the 450 MHz to 10 GHz frequency range
Note:
1. Enhancement mode technology requires positive Vgs, thereby
eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.
Note:
Top View. Package marking provides orientation, product identifica‑
tion and date code.
“R” = Device Type Code
“x” = Date code character. A different character is assigned for each
month and year.
1 page  
ATF-541M4 Typical Performance Curves, continued
30 45
25 C
25
-40 C
85 C
40
35
20
30
15
25
10
20
25 C
-40 C
5
85 C
15
0
01 2 3 4 5 67
FREQUENCY (GHz)
Figure 12. Gain vs. Freq. and Temperature
Tuned for Max OIP3 and Min NF at
Vds = 3V, Ids = 60 mA[1].
10
01 2 3 4 5 67
FREQUENCY (GHz)
Figure 13. OIP3 vs. Freq. and Temperature
Tuned for Max OIP3 and Min NF at
Vds = 3V, Ids = 60 mA[1].
2.0
25 C
-40 C
1.5 85 C
1.0
0.5
0
01
23
45
67
FREQUENCY (GHz)
Figure 14. NF vs. Freq. and Temperature
Tuned for Max OIP3 and Min NF at
Vds = 3V, Ids = 60 mA[1].
23
25 C
22
-40 C
85 C
21
20
19
18
17
01 2 3 4 5 67
FREQUENCY (GHz)
Figure 15. P1dB vs. Freq. and Temperature
Tuned for Max OIP3 and Min NF at
Vds = 3V, Ids = 60 mA[1].
ATF-541M4 Output Reflection Coefficient Parameters Tuned
for Maximum Output IP3[1]; VDS = 3V, IDS = 60 mA
Gamma[2]
Gamma[2]
OIP3
P1dB
Freq Out_Mag. Out_Mag.
(GHz)
(Mag)
(Degrees)
(dBm)
(dBm)
0.9 0.006
23
2.0 0.314 -167
3.9 0.321
134
5.8 0.027
89
35.04
35.82
36.60
37.62
19.47
21.36
20.37
19.38
Notes:
1. Input tuned for minimum NF and the output tuned for maximum
OIP3 using an InterContinental Microwave (ICM) test fixture, double
stub tuners and bias tees.
2. Gamma out is the reflection coefficient of the matching circuit pre‑
sented to the output of the device.
5 Page 
Electrostatic Sensitivity
FETs and RFICs are electrostatic dis‑
charge (ESD) sensitive devices. Avago
devices are manufactured using
a very robust and reliable PHEMT
process, however, permanent dam‑
age may occur to these devices if
they are subjected to high-energy
electrostatic discharges. Electrostatic
charges as high as several thousand
volts (which readily accumulate on the
human body and on test equipment)
can discharge without detection and
may result in failure or degradation in
performance and reliability.
250
200
Electronic devices may be subjected
to ESD damage in any of the follow‑
ing areas:
• Storage & handling
• Inspection
• Assembly & testing
• In-circuit use
The ATF-541M4 is an ESD Class 1
device. Therefore, proper ESD pre‑
cautions are recommended when
handling, inspecting, testing, and
assembling these devices to avoid
damage.
TMAX
Any user-accessible points in wireless
equipment (e.g. antenna or battery
terminals) provide an opportunity for
ESD damage.
For circuit applications in which the
ATF-541M4 is used as an input or
output stage with close coupling
to an external antenna, the device
should be protected from high volt‑
age spikes due to human contact with
the antenna. A good practice, illus‑
trated in Figure 23, is to place a shunt
inductor or RF choke at the antenna
connection to protect the receiver
and transmitter circuits. It is often ad‑
vantageous to integrate the RF choke
into the design of the diplexer or T/R
switch control circuitry.
150
Reflow
Zone
100
Preheat
Zone
Cool Down
Zone
50
0
0 60
Figure 21. Leaded Solder Reflow Profile.
120 180
TIME (seconds)
Figure 23. In-circuit ESD Protection.
240 300
350
Peak Temperature
300 Min. 240 C
Max. 255 C
250
221
200
Reflow Time
Min. 60s
150 Max. 90s
100 Preheat 130 –170 C
Min. 60s
50 Max. 150s
0
0 30 60 90 120 150 180 210 240 270 300 330 360
Figure 22. Lead-free Solder Reflow Profile.
TIME (seconds)
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet ATF-541M4.PDF ] | |
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