|
|
PDF ATF-531P8 Data sheet ( Hoja de datos )
| Número de pieza | ATF-531P8 | |
| Descripción | High Linearity Enhancement Mode Pseudomorphic HEMT | |
| Fabricantes | AVAGO | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de ATF-531P8 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
|
No Preview Available !
ATF-531P8
High Linearity Enhancement Mode[1] Pseudomorphic HEMT
in 2x2 mm2 LPCC[3] Package
Data Sheet
Description
Avago Technologies’ ATF‑531P8 is a single-voltage high
linearity, low noise E‑pHEMT housed in an 8-lead JEDEC-
standard leadless plastic chip carrier (LPCC[3]) package.
The device is ideal as a high linearity, low-noise, medium-
power amplifier. Its operating frequency range is from 50
MHz to 6 GHz.
The thermally efficient package measures only 2 mm
x 2 mm x 0.75 mm. Its backside metalization provides
excellent thermal dissipation as well as visual evidence
of solder reflow. The device has a Point MTTF of over 300
years at a mounting temperature of +85°C. All devices are
100% RF & DC tested.
Pin Connections and Package Marking
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Pin 1 (Source)
Pin 8
Pin 2 (Gate)
Pin 3
3Px
Pin 7 (Drain)
Pin 6
Pin 4 (Source)
Top View
Pin 5
Note:
Package marking provides orientation and identification:
“3P” = Device Code
“x” = Date code indicates the month of manufacture.
Features
• Single voltage operation
• High linearity and gain
• Low noise figure
• Excellent uniformity in product specifications
• Small package size:
2.0 x 2.0 x 0.75 mm
• Point MTTF > 300 years[2]
• MSL-1 and lead-free
• Tape-and-reel packaging option available
Specifications
2 GHz; 4V, 135 mA (Typ.)
• 38 dBm output IP3
• 0.6 dB noise figure
• 20 dB gain
• 10.7 dB LFOM[4]
• 24.5 dBm output power at 1 dB gain compression
Applications
• Front-end LNA Q1 and Q2 driver or pre-driver ampli‑
fier for Cellular/PCS and WCDMA wireless infrastruc‑
ture
• Driver amplifier for WLAN, WLL/RLL and MMDS ap‑
plications
• General purpose discrete E-pHEMT for other high
linearity applications
Notes:
1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional
depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Conforms to JEDEC reference outline MO229 for DRP-N
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power.
1 page  
ATF-531P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3
45 45
40 40
35 35
30 30
25 3V
4V
5V
20
75 90 105 120 135 150 165 180
Ids (mA)
Figure 8. OIP3 vs. Ids and Vds at 900 MHz.
25 3V
4V
5V
20
75 90 105 120 135 150 165 180
Ids (mA)
Figure 9. OIP3 vs. Ids and Vds at 2 GHz.
45
40
35
30
25 3V
4V
5V
20
75 90 105 120 135 150 165 180
Ids (mA)
Figure 10. OIP3 vs. Ids and Vds at 3.9 GHz.
17
16
15
14
13
12
3V
11 4V
5V
10
75 90 105 120 135 150 165 180
Ids (mA)
Figure 11. Small Signal Gain vs. Ids and Vds
at 900 MHz.
30
17
16
15
14
13
12
3V
11 4V
5V
10
75 90 105 120 135 150 165 180
Ids (mA)
Figure 12. Small Signal Gain vs. Ids and Vds
at 2 GHz.
30
12
10
8
6
4
3V
2 4V
5V
0
75 90 105 120 135 150 165 180
Ids (mA)
Figure 13. Small Signal Gain vs. Ids and Vds
at 3.9 GHz.
30
25 25
25
20 20
20
15 3V
4V
5V
10
75 90 105 120 135 150 165 180
Idq (mA)
Figure 14. P1dB vs. Idq and Vds at 900 MHz.
15 3V
4V
5V
10
75 90 105 120 135 150 165 180
Idq (mA)
Figure 15. P1dB vs. Idq and Vds at 2 GHz.
15 3V
4V
5V
10
75 90 105 120 135 150 165 180
Idq (mA)
Figure 16. P1dB vs. Idq and Vds at 3.9 GHz.
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective
of load pull is to optimize OIP3 and therefore may trade-off Small Signal Gain, P1dB and VSWR.
5 Page 
ATF-531P8 Typical Scattering Parameters, VDS = 5V, IDS= 135 mA
Freq.
GHz Mag.
S11 Ang. dB
MSa21g . Ang.
dB
MS1a2 g. Ang.
0.1 0.805 -56.0
34.11 50.734 152.1 -39.17 0.011 62.6
0.2 0.815 -94.0
32.03 39.967 132.6 -34.89 0.018 46.6
0.3 0.831 -116.9 29.97 31.517 120.5 -33.56 0.021 36.3
0.4 0.839 -131.7 28.10 25.418 112.1 -32.77 0.023 30.7
0.5 0.844 -140.9 26.58 21.322 106.4 -32.40 0.024 27.2
0.6 0.846 -148.3 25.20 18.207 101.8 -32.04 0.025 24.9
0.7 0.850 -154.0 24.00 15.852 98.0 -31.70 0.026 23.3
0.8 0.852 -158.7 22.93 14.014 94.8 -31.70 0.026 22.3
0.9 0.855 -162.5 21.98 12.559 92.0 -31.70 0.026 21.6
1
0.854 -165.6
21.10 11.351 89.6 -31.37 0.027 20.9
1.5 0.855 -177.1 17.71 7.681 79.5 -31.06 0.028 21.1
1.9 0.857 176.3
15.71 6.099 73.0 -30.46 0.030 22.3
2
0.851 174.9
15.46 5.931 71.7 -30.17 0.031 22.3
2.4 0.851 169.4
13.89 4.946 65.6 -29.63 0.033 23.3
3
0.852 161.8
11.92 3.943 57.1 -29.12 0.035 24.3
4
0.857 151.1
9.35 2.935 43.9 -27.74 0.041 24.4
5
0.859 141.0
7.30 2.318 30.9 -26.56 0.047 22.8
6
0.870 131.8
5.57 1.899 18.5 -25.51 0.053 19.7
7
0.867 123.6
4.11 1.605 6.5 -24.44 0.060 16.3
8
0.877 115.6
2.80 1.381 -5.2 -23.48 0.067 11.8
9
0.881 106.7
1.82 1.233 -17.0 -22.38 0.076 6.1
10 0.885 95.6
0.75 1.090 -30.1 -21.41 0.085 -1.3
11 0.892 85.2 -0.30 0.966 -42.9 -20.72 0.092 -9.1
12 0.875 74.2 -1.33 0.858 -54.3 -20.00 0.100 -17.0
13 0.883 63.8 -2.49 0.751 -65.9 -19.66 0.104 -24.8
14 0.886 57.9 -3.58 0.662 -76.4 -19.09 0.111 -31.8
15 0.913 47.4 -4.78 0.577 -86.8 -18.71 0.116 -40.3
16 0.908 43.1 -5.81 0.512 -94.4 -18.56 0.118 -47.8
17 0.891 32.2 -6.99 0.447 -105.1 -18.49 0.119 -54.9
18 0.928 20.6 -8.64 0.370 -112.1 -18.86 0.114 -62.6
MagS. 22
Ang.
0.468 -45.2
0.419 -79.7
0.387 -102.0
0.364 -117.9
0.354 -127.0
0.346 -135.4
0.342 -141.6
0.339 -146.5
0.337 -150.5
0.335 -153.9
0.331 -165.0
0.331 -170.4
0.336 -170.9
0.315 -175.8
0.323 178.2
0.343 169.9
0.367 162.1
0.391 154.0
0.417 146.2
0.440 137.7
0.458 129.1
0.482 118.1
0.500 107.5
0.540 98.6
0.593 87.1
0.636 75.8
0.660 66.8
0.699 57.0
0.747 48.4
0.717 39.9
MSG/MAG
dB
36.64
33.46
31.76
30.43
29.49
28.62
27.85
27.32
26.84
26.24
24.38
23.08
22.82
21.76
19.82
16.43
14.19
12.82
11.24
10.41
9.75
8.94
8.31
6.52
5.87
5.23
6.01
4.78
2.98
2.41
Typical Noise Parameters, VDS = 5V, IDS= 135 mA
Freq
GHz
FdmBin
ΓMoapgt .
ΓAnopgt . Rn/50
0.5 0.45 0.20 154.00 0.037
0.9 0.48 0.32 160.00 0.032
1 0.50 0.35 166.00 0.030
1.5 0.55 0.40 170.00 0.030
2 0.65 0.46 177.40 0.030
2.4 0.70 0.49 -175.10 0.032
3 0.77 0.55 -168.90 0.031
3.5 0.84 0.58 -162.60 0.037
3.9 0.90 0.62 -158.20 0.043
5 1.06 0.66 -145.80 0.085
5.8 1.20 0.69 -137.30 0.140
6 1.19 0.69 -135.40 0.150
7 1.40 0.77 -126.50 0.320
8 1.52 0.81 -117.90 0.550
9 1.75 0.82 -107.50 0.890
10 1.88 0.85 -95.60 1.530
GdBa
28.85
25.13
24.43
21.26
19.38
17.90
16.33
15.23
14.60
12.66
11.60
11.38
10.55
9.84
9.05
8.29
40
30
MSG
20
MAG
10
S21
0
-10
0 5 10 15
FREQUENCY (GHz)
Figure 31. MSG/MAG & |S21|2 (dB)
@ 5V, 135 mA.
20
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet ATF-531P8.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ATF-531P8 | High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package |  Agilent |
| ATF-531P8 | High Linearity Enhancement Mode Pseudomorphic HEMT | AVAGO |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |