AT-32011 PDF даташит
Спецификация AT-32011 изготовлена «AVAGO» и имеет функцию, называемую «High Performance NPN Silicon Bipolar Transistor». |
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Детали детали
Номер произв | AT-32011 |
Описание | High Performance NPN Silicon Bipolar Transistor |
Производители | AVAGO |
логотип |
10 Pages
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AT-32011, AT-32033
Low Current, High Performance NPN
Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-32011 and AT-32033 are high performance
NPN bipolar transistors that have been optimized for
maximum ft at low voltage operation, making them ideal
for use in battery powered applications in wireless mar-
kets. The AT-32033 uses the 3 lead SOT‑23, while the AT-
32011 places the same die in the higher performance 4
lead SOT-143. Both packages are industry standard, and
compatible with high volume surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of these transistors yields extremely high
performance products that can perform a multiplicity
of tasks. The 20 emitter finger interdigitated geometry
yields an easy to match to and extremely fast transistor
with moderate power, low noise resistance, and low op-
erating currents.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buffer, oscilla
tor, or active mixer. Typical amplifier designs at 900 MHz
yield 1.2 dB noise figures with 12 dB or more associated
gain at a 2.7 V, 2 mA bias, with noise performance being
relatively insensitive to input match. High gain capabil-
ity at 1 V, 1 mA makes these devices a good fit for 900
MHz pager applications. Voltage breakdowns are high
enough for use at 5 volts.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz ft, 30 GHz fMAX
Self-Aligned-Transistor (SAT) process. The die are nitride
passivated for surface protection. Excellent device uni-
formity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and
gold metalization in the fabrication of these devices.
Features
• High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation
• 900 MHz Performance:
AT-32011: 1 dB NF, 14 dB GA
AT-32033: 1 dB NF, 12.5 dB GA
• Characterized for End-Of-Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT Plastic Packages
• Tape-And-Reel Packaging Option Available
• Lead-free
Pin Connections and Package Marking
EMITTER COLLECTOR
320x
BASE EMITTER
SOT-143 (AT-32011)
COLLECTOR
320x
BASE EMITTER
SOT-23 (AT-32033)
Notes:
Top View.
Note:
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AT-32011, AT-32033 Absolute Maximum Ratings
Symbol
Parameter
Units
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation[2, 3]
Junction Temperature
Storage Temperature
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
1.5
11
5.5
32
200
150
-65 to 150
Thermal Resistance[2]:
θjc = 550 °C/W
Notes:
1. Operation of this device above any one
of these parameters may cause permanent
damage.
2. Tmounting surface = 25°C.
3. Derate at 1.82 mW/°C for TC > 40°C.
Electrical Specifications, TA = 25°C
AT-32011 AT-32033
Symbol Parameters and Test Conditions
Units Min. Typ. Max. Min. Typ.
NF
Noise Figure
VCE = 2.7 V, IC = 2 mA
f = 0.9 GHz
dB
1.0[1] 1.3[1]
1.0[2]
GA
Associated Gain
VCE = 2.7 V, IC = 2 mA
f = 0.9 GHz
dB 12.5[1] 14[1]
11[2] 12.5[2]
hFE
Forward Current Transfer Ratio
VCE = 2.7 V, IC = 2 mA
– 70
300 70
ICBO
Collector Cutoff Current
VCB = 3 V
µA
0.2
IEBO
Emitter Cutoff Current
VEB = 1 V
µA
1.5
Notes:
1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
Max.
1.3[2]
300
0.2
1.5
1000 pF
RF IN
VBB
W = 10 L = 1870
W = 10
CKT A: L = 380
CKT B: L = 380
W = 30
L = 60
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
VCC
1000 pF
W = 30
L = 60
W = 10 L = 1870
CKT A: 25 Ω
CKT B: 5 Ω
RF OUT
W = 10
CKT A: L = 105
CKT A: W = 30 L = 50 x 2
CKT B: W = 30 L = 60
CKT B: L = 850
NOT TO SCALE
DIMENSIONS IN MILS
Figure 1. Test Circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between bestAnTo-i3s2e0f1ig1ufrige,1best gain, stability, and a practical synthesizable match.
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Characterization Information, TA = 25°C
Symbol Parameters and Test Conditions
Units
P1dB
Power at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA
G1dB
Gain at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA
IP3
Output Third Order Intercept Point (opt tuning)
VCE = 2.7 V, IC = 20 mA
|S21|E2 Gain in 50 Ω System
VCE = 2.7 V, IC = 2 mA
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
dBm
dB
dBm
dB
AT-32011
Typ.
13
16.5
24
13
AT-32033
Typ.
13
15
24
11.5
2 25 20
1.5
1
1 mA
2 mA
5 mA
0.5 10 mA
20 mA
00 0.5 1 1.5 2
FREQUENCY (GHz)
2.5
Figure 2. AT-32011 and AT-32033 Minimum Noise Fig-
ure vs. Frequency and Current at Vce = 2.7 V.
AT-32011 fig 2
20
15
10
1 mA
2 mA
5 5 mA
10 mA
20 mA
00 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
15
10
1 mA
5
2 mA
5 mA
10 mA
20 mA
00 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 3. AT-32011 Associated Gain at Optimum Noise
Match vs. Frequency and Current at Vce = 2.7 V.
AT-32011 fig 3
Figure 4. AT-32033 Associated Gain at Optimum Noise
Match vs. Frequency and Current at Vce = 2.7 V.
AT-32011 fig 4
20 20 20
15
10
5
2 mA
0 5 mA
10 mA
20 mA
-50 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
15
10
5
2 mA
5 mA
10 mA
20 mA
00 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
15
10
5
2 mA
5 mA
10 mA
20 mA
00 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 5. AT-32011 and AT-32033 Power at 1 dB Gain
Compression vs. Frequency and Current at Vce = 2.7 V.
AT-32011 fig 5
Figure 6. AT-32011 1 dB Compressed Gain vs. Frequen-
cy and Current at Vce = 2.7 V.
AT-32011 fig 6
Figure 7. AT-32033 1 dB Compressed Gain vs. Frequen-
cy and Current at Vce = 2.7 V.
AT-32011 fig 7
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Номер в каталоге | Описание | Производители |
AT-32011 | Low Current/ High Performance NPN Silicon Bipolar Transistor | Agilent(Hewlett-Packard) |
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AT-32011-BLK | Low Current/ High Performance NPN Silicon Bipolar Transistor | Agilent(Hewlett-Packard) |
AT-32011-TR1 | Low Current/ High Performance NPN Silicon Bipolar Transistor | Agilent(Hewlett-Packard) |
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