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1T407 PDF даташит

Спецификация 1T407 изготовлена ​​​​«Sony Corporation» и имеет функцию, называемую «Variable Capacitance Diode».

Детали детали

Номер произв 1T407
Описание Variable Capacitance Diode
Производители Sony Corporation
логотип Sony Corporation логотип 

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1T407 Даташит, Описание, Даташиты
Variable Capacitance Diode
1T407
Description
The 1T407 is a variable capacitance diode
designed for electronic tuning of wide-band CATV
tuners using a super-small-miniature flat package
(SSVC).
M-290
Features
Super-small-miniature flat package
Low series resistance: 1.1 Max. (f=470 MHz)
Large capacitance ratio: 15.5 Typ. (C2/C25)
21.5 Min. (C1/C28)
1.03 Min. (C25/C28)
Small leakage current: 10 nA Max. (VR=28 V)
Capacitance deviation in a matching group:
within 2 %
Absolute Maximum Ratings (Ta=25 °C)
Reverse voltage
VR 34
Operating temperature Topr –20 to +75
Storage temperature Tstg –65 to +150
V
°C
°C
Applications
Electronic tuning of wide-band CATV tuners
Structure
Silicon epitaxial planar type diode
Electrical Characteristics
(Ta=25 °C)
Item Symbol Conditions
Reverse current
Reverse voltage
Diode capacitance
Capacitance ratio
Series resistance
Capacitance
deviation in a
matching group
IR
VR
C2
C25
C2/C25
C1/C28
C25/C/28
rs
C
VR=28 V
IR=1 µA
VR=2 V, f=1 MHz
VR=25 V, f=1 MHz
CD=14 pF, f=470 MHz
VR=1 to 28 V, f= MHz
Min.
34
42.86
2.56
14.5
21.5
1.03
Typ.
15.5
Max.
10
50.96
2.99
1.1
2
Unit
nA
V
pF
pF
%
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E95920-TE









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1T407 Даташит, Описание, Даташиты
Diode capacitance vs. Reverse voltage
100
Ta=25°C
50
20
10
5
2
1
12
5 10 20
VR-Reverse voltage (V)
50
1T407
Reverse current vs. Ambient temperature
VR=28V
100
10
1
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
Forward voltage vs. Ambient temperature
0.80
IF=1mA
0.70
0.60
0.50
–20
0 20 40 60
Ta-Ambient temperature (°C)
80
Reverse voltage vs. Ambient temperature
50
IR=10µ
A
45
40
35
–20
0 20 40 60
Ta-Ambient temperature (°C)
80
—2—









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1T407 Даташит, Описание, Даташиты
Diode capacitance vs. Ambient temperature
1.03
VR=1V
1.02
VR=2V
1.01
1.00
VR=7V
VR=25V
VR=15V
0.99
0.98
–20
0 20 40 60
Ta-Ambient temperature (°C)
80
1T407
Reverse current vs. Reverse voltage
100
Ta=80°C
Ta=60°C
10
Ta=25°C
1
1000
Temperature coefficient of diode capacitance
500
200
100
50
1
2 5 10 20
VR-Reverse voltage (V)
50
0.1
1
3 10 30
VR-Reverse voltage (V)
—3—










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