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1T365 PDF даташит

Спецификация 1T365 изготовлена ​​​​«Sony Corporation» и имеет функцию, называемую «Silicon Variable Capacitance Diode».

Детали детали

Номер произв 1T365
Описание Silicon Variable Capacitance Diode
Производители Sony Corporation
логотип Sony Corporation логотип 

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1T365 Даташит, Описание, Даташиты
Silicon Variable Capacitance Diode
1T365
Description
The 1T365 is a variable capacitance diode
contained in super miniature package, and used for
electronic-tuning of BS tuner.
M-235
Features
Super miniature package
Small capacitance
0.7 pF Typ. (VR=25 V)
Low leakage current 10 nA Max. (VR=28 V)
Small serial resistance 1.1 Typ.
(VR=1 V, f=470 MHz)
Structure
Silicon epitaxial planar type diode
Absolute Maximum Ratings (Ta=25 °C)
Reverse voltage
VR 30
V
Maximum reverse voltage VRM
35
V
(RL10 k)
Operating temperature Topr –20 to +75 °C
Storage temperature
Tstg –65 to +150 °C
Electrical Characteristics
Item
Reverse current
Diode capacitance
Capacitance ratio
Serial resistance
Capacitance deviation in a
matching group
Symbol
IR
C2
C25
C2/C25
rs
Conditions
VR=28 V
VR=2 V, f=1 MHz
VR=25 V, f=1 MHz
VR=1 V, f=470 MHz
C VR=2 to 25 V, f=1 MHz
(Ta=25 °C)
Min. Typ. Max. Unit
10 nA
3.31 4.55 pF
0.61 0.70 0.77 pF
5.0 5.7
1.1 1.8
5.0 %
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E91539A82-TE









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1T365 Даташит, Описание, Даташиты
Example of Representative Characteristics
Diode capacitance vs. Reverse voltage
10
Ta=25°C
f=1MHz
1
0.1
1
10
VR-Reverse voltage (V)
100
1T365
Reverse voltage vs. Operating ambient temperature
45
IR=10µA
40
35
30
–20
0 20 40 60 80
Ta-Operating ambient temperature (°C)
100
Reverse current vs. Operating ambient temperature
100
VR=28V
10
1.0
0.1
0.01
–20
0
20 40 60 80
Ta-Operating ambient temperature (°C)
Reverse current vs. Reverse voltage
10
Ta=60°C
1.0
Ta=25°C
0.1
0.01
1
10
VR-Reverse voltage (V)
100
—2—









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1T365 Даташит, Описание, Даташиты
1T365
Serial resistance vs. Reverse voltage
1.6
f=470MHz
1.4 Ta=25°C
1.2
1.0
0.8
0.6
0.4
0.2
0
1
23
5
10 20 30
VR-Reverse voltage (V)
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
100
Serial resistance vs. Frequency
VR=1V
Ta=25°C
200 500 1000
f-Frequency (MHz)
Diode capacitance vs. Operating ambient temperature
1.03
f=1MHz
1.02
1.01
1.00
VR=2V
VR=25V
VR=10V
0.99
0.98
–20
0 20 40 60
Ta-Operating ambient temperature (°C)
80
1000
Temperature coefficient of diode capacitance
f=1MHz
100
10
1
10
VR-Reverse voltage (V)
100
—3—










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Номер в каталогеОписаниеПроизводители
1T362Silicon Variable Capacitance DiodeSony Corporation
Sony Corporation
1T362ASilicon Variable Capacitance DiodeSony Corporation
Sony Corporation
1T363Silicon Variable Capacitance DiodeSony Corporation
Sony Corporation
1T363ASilicon Variable Capacitance DiodeSony Corporation
Sony Corporation

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