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6PT PDF даташит

Спецификация 6PT изготовлена ​​​​«nELL» и имеет функцию, называемую «Stansard SCRs».

Детали детали

Номер произв 6PT
Описание Stansard SCRs
Производители nELL
логотип nELL логотип 

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6PT Даташит, Описание, Даташиты
SEMICONDUCTOR
6PT Series RRooHHSS
Stansard SCRs, 6A
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
6
600 to 1000
15
Unit
A
V
mA
DESCRIPTION
The 6PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
designed for power supply up to 400Hz on resistive or
inductive load.
A
K
A
G
TO-251 (I-PAK)
(6PTxxF)
A
A
KA
G
TO-252 (D-PAK)
(6PTxxG)
K AG
KAG
TO-220AB (Non-lnsulated)
(6PTxxA)
TO-220AB (lnsulated)
(6PTxxAI)
2(A)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
IT(RMS)
IT(AV)
TO-251/TO-252/TO-220AB
TO-220AB insulated
TO-251/TO-252/TO-220AB
TO-220AB insulated
Tc=110°C
Tc=105°C
Tc=110°C
Tc=105°C
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
ITSM
I2t
F =50 Hz
F =60 Hz
tp = 10 ms
t = 20 ms
t = 16.7 ms
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
dI/dt
IGM
PGM
PG(AV)
VDRM
VRRM
Tstg
F = 60 Hz
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Tj = 125ºC
Tj =125ºC
Operating junction temperature range
Tj
VALUE
6
3.8
70
73
24.5
50
4
10
1
600 to 1000
- 40 to + 150
- 40 to + 125
UNIT
A
A
A
A2s
A/µs
A
W
W
V
ºC
www.nellsemi.com
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6PT Даташит, Описание, Даташиты
SEMICONDUCTOR
6PT Series RRooHHSS
ELECTRICAL SPECIFICATIONS (TJ = 25 ºC unless otherwise specified)
SYMBOL
TEST CONDITIONS
IGT
VGT
VGD
IH
IL
dV/dt
VTM
IDRM
IRRM
tq
VD = 12V, RL = 30Ω
VD = VDRM, RL = 3.3KΩ
RGK = 220Ω, Tj = 110°C
IT = 100mA, Gate open
IG = 1.2×IGT
VD = 67% VDRM, Gate open, Tj = 110°C
IT = 12A, tP = 380 µs
VD=VDRM, VR=VRRM
RGK = 220Ω
VD = 67% VDRM, ITM = 12A, VR = 25V
dITM = 30A/µs, dVD/dt =50V/µs
Tj = 25°C
Tj = 25°C
Tj = 110°C
Tj = 110°C
Max.
Max.
Min.
Max.
Max.
Min.
Max.
Max.
Max.
TYP.
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Junction to case (DC)
Rth(j-a)
Junction to ambient
Parameter
S = 0.5 cm2
IPAK/DPAK/TO-220AB
TO-252(D-PAK)
TO-220AB
TO-251(I-PAK)
6PTxxxx
15
1.3
0.2
30
50
200
1.6
5
2
70
Unit
mA
V
V
mA
mA
V/µs
V
µA
mA
µS
VALUE
2.5
70
60
100
UNIT
°C/W
°C/W
PRODUCT SELECTOR
PART NUMBER
6PTxxA/6PTxxAl
6PTxxF
6PTxxG
600 V
V
V
V
VOLTAGE (x x)
800 V
1000 V
VV
VV
VV
SENSITIVITY
15 mA
15 mA
15 mA
PACKAGE
TO-220AB
I-PAK
D-PAK
ORDERING INFORMATION
ORDERING TYPE
MARKING
6PTxxA
6PTxxA
6PTxxAI
6PTxxAI
6PTxxF
6PTxxF
6PTxxG
6PTxxG
Note: xx = voltage
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-251(I-PAK)
TO-252(D-PAK)
WEIGHT
2.0g
2.3g
0.40g
0.38g
BASE Q,TY DELIVERY MODE
50 Tube
50 Tube
80 Tube
80 Tube
www.nellsemi.com
Page 2 of 5









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6PT Даташит, Описание, Даташиты
SEMICONDUCTOR
6PT Series RRooHHSS
ORDERING INFORMATION SCHEME
Current
6 = 6A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
F = TO-251 (IPAK)
G = TO-252 (DPAK)
6 PT 06
Fig.1 Maximum average power dissdipation
versus average on-state current
P(W)
7
6
5
4 α=60°
3 α=30°
α=90°
α=120°
α=180°
DC
2
360°
1
0
IT(AV)(A)
α
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig.2 Correlation between maximum average
power dissipation and maximum
allowable temperature(Tamb and Tlead)
P(W)
7
6 α=180°
Rth=15°C/W
Rth=10°C/W
Rth=5°C/W
Tlead(°C)
Rth=0°C/W
110
5
4 115
3
2 120
1
Tamb(°C)
0 125
0 20 40 60 80 100 120 140
www.nellsemi.com
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