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6N65Z-Q PDF даташит

Спецификация 6N65Z-Q изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 6N65Z-Q
Описание N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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6N65Z-Q Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
6N65Z-Q
6.2A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 6N65Z-Q is a high voltage power MOSFET designed
to have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications of switching power supplies and adaptors.
FEATURES
* RDS(ON) = 1.85@VGS = 10V, ID=3.1A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N65ZL-TF3-T
6N65ZG-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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6N65Z-Q Даташит, Описание, Даташиты
6N65Z-Q
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 650 V
Gate-Source Voltage
VGSS ±20 V
Avalanche Current (Note 2)
Continuous Drain Current
IAR 6.2 A
ID 6.2 A
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IDM
EAS
EAR
dv/dt
24.8 A
100 mJ
13 mJ
4.5 ns
Power Dissipation
Junction Temperature
PD 40 W
TJ
+150
°C
Operating Temperature
Storage Temperature
TOPR
TSTG
-55 ~ +150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L = 14mH, IAS = 3.7A, VDD = 90V, RG = 25 , Starting TJ = 25°C
4. ISD 6.2A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
62.5
3.2
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6N65Z-Q Даташит, Описание, Даташиты
6N65Z-Q
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250μA
650
V
Drain-Source Leakage Current
IDSS VDS = 650V, VGS = 0V
10 μA
Gate-
Source
Leakage Current
Forward
Reverse
IGSS
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250μA, Referenced to 25°C
5 μA
5 μA
0.53 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 3.1A
2.0 4.0 V
1.7 1.85
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0 MHz
750 900
65 80
10.5 13
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=30V, ID =0.5A, RG =25
(Note 1, 2)
VDS=520V, ID=6.2A, VGS=10V
(Note 1, 2)
50 70 ns
55 75 ns
150 170 ns
70 90 ns
75 95 nC
18 nC
19 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS = 6.2 A
Maximum Continuous Drain-Source Diode
Forward Current
IS
1.4 V
6.2 A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
Reverse Recovery Charge
trr VGS = 0 V, IS = 6.2 A,
QRR dIF/dt = 100 A/μs (Note 1)
Notes: 1. Pulse Test: Pulse width 300μs, Duty cycle 2%.
2. Essentially independent of operating temperature.
24.8 A
290 ns
2.35 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Номер в каталогеОписаниеПроизводители
6N65Z-QN-CHANNEL POWER MOSFETUnisonic Technologies
Unisonic Technologies

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