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BLF2425M7LS250P PDF даташит

Спецификация BLF2425M7LS250P изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «Power LDMOS transistor».

Детали детали

Номер произв BLF2425M7LS250P
Описание Power LDMOS transistor
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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BLF2425M7LS250P Даташит, Описание, Даташиты
BLF2425M7L250P;
BLF2425M7LS250P
Power LDMOS transistor
Rev. 4 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW
applications and are assembled in high performance ceramic packages, available in
eared and earless versions
Table 1. Typical performance
RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
(MHz)
(V) (W)
(dB)
CW
2450
28 250
15
D
(%)
51
1.2 Features and benefits
High efficiency
Easy power control
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally matched
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency
range such as ISM and industrial heating.









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BLF2425M7LS250P Даташит, Описание, Даташиты
NXP Semiconductors
BLF2425M7L(S)250P
Power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description
BLF2425M7L250P (SOT539A)
1 drain1
2 drain2
3 gate1
4 gate2
5 source
BLF2425M7LS250P (SOT539B)
1 drain1
2 drain2
3 gate1
4 gate2
5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
12
1
5
34
[1]
3
5
4
2
sym117
12
1
5
34
[1]
3
5
4
2
sym117
Table 3. Ordering information
Type number
Package
Name Description
BLF2425M7L250P -
flanged balanced ceramic package;
2 mounting holes; 4 leads
BLF2425M7LS250P -
earless flanged balanced ceramic package; 4 leads
Version
SOT539A
SOT539B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 65 V
0.5 +13 V
65 +150 C
- 225 C
BLF2425M7L250P_2425M7LS250P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
2 of 11









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BLF2425M7LS250P Даташит, Описание, Даташиты
NXP Semiconductors
BLF2425M7L(S)250P
Power LDMOS transistor
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Rth(j-case) thermal resistance from junction to case
Conditions
Tcase = 80 C; PL = 250 W
Typ Unit
0.19 K/W
6. Characteristics
Table 6. DC characteristics
Tj = 25 C per section; unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 2.2 mA
VGS(th)
IDSS
IDSX
IGSS
gfs
RDS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
VDS = 10 V; ID = 220 mA
VGS = 0 V; VDS = 28 V
VGS = VGS(th) + 3.75 V;
VDS = 10 V
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 11 A
VGS = VGS(th) + 3.75 V;
ID = 7.7 A
Min
65
1.5
-
-
-
-
-
Typ
-
1.9
-
39
-
16
0.08
Max
-
2.3
3
-
300
-
-
Unit
V
V
A
A
nA
S
Table 7. RF characteristics
Test signal: CW at 2450 MHz; RF performance at VDS = 28 V; IDq = 20 mA; Tcase = 25 C; unless
otherwise specified; in a class-AB production test circuit.
Symbol Parameter
Conditions
Min Typ Max Unit
Gp power gain
RLin input return loss
D drain efficiency
PL = 250 W
PL = 250 W
PL = 250 W
14 15 -
dB
- 18 10 dB
46 51 -
%
7. Test information
7.1 Ruggedness in class-AB operation
The BLF2425M7L250P and BLF2425M7LS250P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: VDS = 28 V; IDq = 20 mA; PL = 250 W (CW); f = 2450 MHz.
BLF2425M7L250P_2425M7LS250P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
3 of 11










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Номер в каталогеОписаниеПроизводители
BLF2425M7LS250PPower LDMOS transistorNXP Semiconductors
NXP Semiconductors

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