BLF2425M6LS180P PDF даташит
Спецификация BLF2425M6LS180P изготовлена «NXP Semiconductors» и имеет функцию, называемую «Power LDMOS transistor». |
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Детали детали
Номер произв | BLF2425M6LS180P |
Описание | Power LDMOS transistor |
Производители | NXP Semiconductors |
логотип |
12 Pages
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BLF2425M6L180P;
BLF2425M6LS180P
Power LDMOS transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for various applications such as ISM and industrial
heating at frequencies from 2400 MHz to 2500 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS
PL(AV)
Gp
(MHz)
(mA) (V) (W)
(dB)
CW
2450
10
28 180
13.3
D
(%)
53.5
1.2 Features and benefits
Easy power control
Integrated ESD protection
High efficiency
Excellent thermal stability
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency
range such as ISM and industrial heating.
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NXP Semiconductors
BLF2425M6L(S)180P
Power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description
BLF2425M6L180P (SOT539A)
1 drain1
2 drain2
3 gate1
4 gate2
5 source
BLF2425M6LS180P (SOT539B)
1 drain1
2 drain2
3 gate1
4 gate2
5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
12
1
5
34
[1]
3
5
4
2
sym117
12
1
5
34
[1]
3
5
4
2
sym117
Table 3. Ordering information
Type number
Package
Name Description
BLF2425M6L180P -
flanged balanced ceramic package; 2 mounting holes;
4 leads
BLF2425M6LS180P -
earless flanged balanced ceramic package; 4 leads
Version
SOT539A
SOT539B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 65 V
0.5 +13 V
65 +150 C
- 225 C
BLF2425M6L180P_25M6LS180P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
2 of 12
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NXP Semiconductors
BLF2425M6L(S)180P
Power LDMOS transistor
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Rth(j-case) thermal resistance from junction to case
Conditions
Tcase = 80 C; PL = 180 W
Typ Unit
0.38 K/W
6. Characteristics
Table 6. DC characteristics
Tj = 25 C per section; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 1.44 mA 65 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 144 mA 1.4 1.8 2.4 V
IDSS drain leakage current
VGS = 0 V
VDS = 28 V
- - 3 A
VDS = 65 V
- - 5 A
IDSX drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
24 -
A
IGSS gate leakage current
VGS = 11 V; VDS = 0 V - - 300 nA
gfs
forward transconductance
VDS = 10 V; ID = 7.2 A -
10 -
S
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 5 A
-
0.1 -
Table 7. RF characteristics
Test signal: CW; f = 2450 MHz; VDS = 28 V; IDq = 10 mA; Tcase = 25 C unless otherwise specified in
a class-AB production test circuit.
Symbol
Parameter
Conditions
Min Typ Max Unit
Gp power gain
PL = 180 W
11.0 13.3 -
dB
D
drain efficiency
PL = 180 W
50 53.5 -
%
RLin
input return loss
PL = 180 W
-
15 9
dB
7. Test information
7.1 Ruggedness in class-AB operation
The BLF2425M6L180P and BLF2425M6LS180P are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: VDS = 28 V; IDq = 10 mA; PL = 180 W (CW); f = 2450 MHz.
BLF2425M6L180P_25M6LS180P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
3 of 12
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BLF2425M6LS180P | Power LDMOS transistor | NXP Semiconductors |
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