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NSBA115TF3 PDF даташит

Спецификация NSBA115TF3 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Digital Transistors».

Детали детали

Номер произв NSBA115TF3
Описание Digital Transistors
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSBA115TF3 Даташит, Описание, Даташиты
MUN2141, MMUN2141L,
MUN5141, DTA115TE,
DTA115TM3, NSBA115TF3
Digital Transistors (BRT)
R1 = 100 kW, R2 = 8 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
CollectorBase Voltage
VCBO
50
Vdc
CollectorEmitter Voltage
VCEO
50
Vdc
Collector Current Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
5
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
PIN CONNECTIONS
PIN 3
COLLECTOR
PIN 1
BASE
R1
(OUTPUT)
(INPUT) R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
XX MG
G
1
SC59
CASE 318D
STYLE 1
XXX MG
G
1
SOT23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
SC70/SOT323
CASE 419
STYLE 3
SC75
CASE 463
STYLE 1
XX M
1
SOT723
CASE 631AA
STYLE 1
XM 1
SOT1123
CASE 524AA
STYLE 1
XXX
M
G
= Specific Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
© Semiconductor Components Industries, LLC, 2013
February, 2013 Rev. 2
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
1 Publication Order Number:
DTA115T/D









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NSBA115TF3 Даташит, Описание, Даташиты
MUN2141, MMUN2141L, MUN5141, DTA115TE, DTA115TM3, NSBA115TF3
Table 1. ORDERING INFORMATION
Device
Part Marking
Package
Shipping
MUN2141T1G
6Y
SC59
3000 / Tape & Reel
(PbFree)
MMUN2141LT1G
ACH
SOT23
(PbFree)
3000 / Tape & Reel
MUN5141T1G
6T
SC70/SOT323
3000 / Tape & Reel
(PbFree)
DTA115TET1G
6U
SC75
3000 / Tape & Reel
(PbFree)
DTA115TM3T5G
7G
SOT723
8000 / Tape & Reel
(PbFree)
NSBA115TF3T5G
Q (90°)*
SOT1123
(PbFree)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
* (xx°) = Degree rotation in the clockwise direction.
300
250
200
(1) (2) (3) (4) (5)
150
100
(1) SC75 and SC70/SOT323; Minimum Pad
(2) SC59; Minimum Pad
(3) SOT23; Minimum Pad
(4) SOT1123; 100 mm2, 1 oz. copper trace
(5) SOT723; Minimum Pad
50
0
50 25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
http://onsemi.com
2









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NSBA115TF3 Даташит, Описание, Даташиты
MUN2141, MMUN2141L, MUN5141, DTA115TE, DTA115TM3, NSBA115TF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SC59) (MUN2141)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT23) (MMUN2141L)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC70/SOT323) (MUN5141)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC75) (DTA115TE)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT723) (DTA115TM3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 x 1.0 Inch Pad.
3. FR4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR4 @ 500 mm2, 1 oz. copper traces, still air.
Symbol
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
TJ, Tstg
PD
RqJA
TJ, Tstg
http://onsemi.com
3
Max Unit
230
338
1.8
2.7
540
370
264
287
55 to +150
mW
mW/°C
°C/W
°C/W
°C
246
400
2.0
3.2
508
311
174
208
55 to +150
mW
mW/°C
°C/W
°C/W
°C
202
310
1.6
2.5
618
403
280
332
55 to +150
mW
mW/°C
°C/W
°C/W
°C
200
300
1.6
2.4
600
400
55 to +150
mW
mW/°C
°C/W
°C
260
600
2.0
4.8
480
205
55 to +150
mW
mW/°C
°C/W
°C










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NSBA115TF3Digital TransistorsON Semiconductor
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